Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

Jenn-Fang Chen; Nie Chuan Chen; Wen Yen Huang; Wei-I Lee; Ming Shiann Feng

doi:10.1143/JJAP.35.L810

Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

Jenn-Fang Chen^*, Nie Chuan Chen, Wen Yen Huang, Wei-I Lee, Ming Shiann Feng

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.

Original language	English
Pages (from-to)	L810-L812
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	35
Issue number	7 PART A
DOIs	https://doi.org/10.1143/JJAP.35.L810
State	Published - 1 Jul 1996

Keywords

Deep levels
GaN
OMVPE
Transient capacitance

Access to Document

10.1143/JJAP.35.L810

Cite this

@article{bad832db77704e4aa93eb32b43e9651c,

title = "Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method",

abstract = "The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.",

keywords = "Deep levels, GaN, OMVPE, Transient capacitance",

author = "Jenn-Fang Chen and Chen, \{Nie Chuan\} and Huang, \{Wen Yen\} and Wei-I Lee and Feng, \{Ming Shiann\}",

year = "1996",

month = jul,

day = "1",

doi = "10.1143/JJAP.35.L810",

language = "English",

volume = "35",

pages = "L810--L812",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "7 PART A",

}

TY - JOUR

T1 - Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

AU - Chen, Jenn-Fang

AU - Chen, Nie Chuan

AU - Huang, Wen Yen

AU - Lee, Wei-I

AU - Feng, Ming Shiann

PY - 1996/7/1

Y1 - 1996/7/1

N2 - The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.

AB - The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.

KW - Deep levels

KW - GaN

KW - OMVPE

KW - Transient capacitance

UR - https://www.scopus.com/pages/publications/0030189722

U2 - 10.1143/JJAP.35.L810

DO - 10.1143/JJAP.35.L810

M3 - Article

AN - SCOPUS:0030189722

SN - 0021-4922

VL - 35

SP - L810-L812

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 7 PART A

ER -

Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this