Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

Chiung Chih Hsu; Ray-Quen Hsu; Yue Han Wu; Tung Wei Chi; Chen Hao Chiang; Jenn-Fang Chen; Mao Nan Chang

doi:10.1016/j.ultramic.2008.04.098

Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

Chiung Chih Hsu^*, Ray-Quen Hsu, Yue Han Wu, Tung Wei Chi, Chen Hao Chiang, Jenn-Fang Chen, Mao Nan Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Quantum dots (QDs) have great potential in optical fiber communication applications were widely recognized. The structure of molecular beam epitaxy (MBE) grew InAsN QDs were investigated by transmission electron microscopy (TEM) and measured their optical properties by photoluminescence (PL). TEM images show that the InAsN QDs are irregular or oval shaped. Some of the InAsN QDs are observed to have defects, such as dislocations at or near the surface in contrast to InAs QDs, which appear to be defect free. PL results for InAsN QDs showed a red-shifted emission peak. In addition, the InAsN emission peak is broader than InAs QDs, which supports the TEM observation that the size distribution of the InAsN QDs is more random than InAs QDs. The results show that the addition of nitrogen to InAs QDs leads to a decrease in the average size of the QDs, bring changes in the QD's shape, compositional distribution, and optical properties.

Original language	American English
Pages (from-to)	1495-1499
Number of pages	5
Journal	Ultramicroscopy
Volume	108
Issue number	11
DOIs	https://doi.org/10.1016/j.ultramic.2008.04.098
State	Published - 1 Oct 2008

Keywords

Molecular beam epitaxy
PL
Quantum dots
TEM

Access to Document

10.1016/j.ultramic.2008.04.098

Cite this

@article{990463560f4b4f4383c10218d6e14fa7,

title = "Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence",

abstract = "Quantum dots (QDs) have great potential in optical fiber communication applications were widely recognized. The structure of molecular beam epitaxy (MBE) grew InAsN QDs were investigated by transmission electron microscopy (TEM) and measured their optical properties by photoluminescence (PL). TEM images show that the InAsN QDs are irregular or oval shaped. Some of the InAsN QDs are observed to have defects, such as dislocations at or near the surface in contrast to InAs QDs, which appear to be defect free. PL results for InAsN QDs showed a red-shifted emission peak. In addition, the InAsN emission peak is broader than InAs QDs, which supports the TEM observation that the size distribution of the InAsN QDs is more random than InAs QDs. The results show that the addition of nitrogen to InAs QDs leads to a decrease in the average size of the QDs, bring changes in the QD's shape, compositional distribution, and optical properties.",

keywords = "Molecular beam epitaxy, PL, Quantum dots, TEM",

author = "Hsu, {Chiung Chih} and Ray-Quen Hsu and Wu, {Yue Han} and Chi, {Tung Wei} and Chiang, {Chen Hao} and Jenn-Fang Chen and Chang, {Mao Nan}",

year = "2008",

month = oct,

day = "1",

doi = "10.1016/j.ultramic.2008.04.098",

language = "American English",

volume = "108",

pages = "1495--1499",

journal = "Ultramicroscopy",

issn = "0304-3991",

publisher = "Elsevier B.V.",

number = "11",

}

TY - JOUR

T1 - Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

AU - Hsu, Chiung Chih

AU - Hsu, Ray-Quen

AU - Wu, Yue Han

AU - Chi, Tung Wei

AU - Chiang, Chen Hao

AU - Chen, Jenn-Fang

AU - Chang, Mao Nan

PY - 2008/10/1

Y1 - 2008/10/1

N2 - Quantum dots (QDs) have great potential in optical fiber communication applications were widely recognized. The structure of molecular beam epitaxy (MBE) grew InAsN QDs were investigated by transmission electron microscopy (TEM) and measured their optical properties by photoluminescence (PL). TEM images show that the InAsN QDs are irregular or oval shaped. Some of the InAsN QDs are observed to have defects, such as dislocations at or near the surface in contrast to InAs QDs, which appear to be defect free. PL results for InAsN QDs showed a red-shifted emission peak. In addition, the InAsN emission peak is broader than InAs QDs, which supports the TEM observation that the size distribution of the InAsN QDs is more random than InAs QDs. The results show that the addition of nitrogen to InAs QDs leads to a decrease in the average size of the QDs, bring changes in the QD's shape, compositional distribution, and optical properties.

AB - Quantum dots (QDs) have great potential in optical fiber communication applications were widely recognized. The structure of molecular beam epitaxy (MBE) grew InAsN QDs were investigated by transmission electron microscopy (TEM) and measured their optical properties by photoluminescence (PL). TEM images show that the InAsN QDs are irregular or oval shaped. Some of the InAsN QDs are observed to have defects, such as dislocations at or near the surface in contrast to InAs QDs, which appear to be defect free. PL results for InAsN QDs showed a red-shifted emission peak. In addition, the InAsN emission peak is broader than InAs QDs, which supports the TEM observation that the size distribution of the InAsN QDs is more random than InAs QDs. The results show that the addition of nitrogen to InAs QDs leads to a decrease in the average size of the QDs, bring changes in the QD's shape, compositional distribution, and optical properties.

KW - Molecular beam epitaxy

KW - PL

KW - Quantum dots

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=52949102532&partnerID=8YFLogxK

U2 - 10.1016/j.ultramic.2008.04.098

DO - 10.1016/j.ultramic.2008.04.098

M3 - Article

C2 - 18768262

AN - SCOPUS:52949102532

SN - 0304-3991

VL - 108

SP - 1495

EP - 1499

JO - Ultramicroscopy

JF - Ultramicroscopy

IS - 11

ER -

Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this