Abstract
We propose a method to analyze the dielectric prebreakdown (DB) which is based on: 1) charge transport; 2) stochastic trap-cluster generations; and 3) percolation in a metal-insulator-metal (MIM) stacked polycrystalline high- κ capacitor of TiN-TiO2-ZrO2-TiO2-TiN. We assume that measured dielectric leakage current until the breakdown is comprised of transient transports under static fields: direct tunneling, trap-assisted tunneling (TAT), and inelastic tunneling. The charge transports induce trap generation and formation of stochastic trap-cluster. The generated trap-cluster amplified the stress-induced leakage current (SILC). One of the clusters can be expanded and electrically link the cathode and anode throughout the dielectric to form a critical path. We can model the current through this path analytically by partition function and percolation. By careful analysis of measured time-dependent dielectric leakage currents, we found that prebreakdown is most related to SILC and inelastic tunneling at a low electric field (< 4 MV/cm).
Original language | English |
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Pages (from-to) | 4793-4799 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 70 |
Issue number | 9 |
DOIs | |
State | Published - 1 Sep 2023 |
Keywords
- Dielectric breakdown (DB)
- metal-insulator-metal (MIM) capacitor
- percolation
- polycrystalline
- stress-induced leakage current (SILC)
- time-dependent DB (TDDB)
- ZrO