Analysis of Dielectric Prebreakdown of High-κ Stacking Polycrystalline MIM by Stochastic Trap-Clusters Growing and Percolation-Based Transportation

Hsin Jyun Lin*, Chihiro Tamura, Koji Akiyama, Genji Nakamura, Hiroyuki Nagai, Hiroshi Watanabe

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We propose a method to analyze the dielectric prebreakdown (DB) which is based on: 1) charge transport; 2) stochastic trap-cluster generations; and 3) percolation in a metal-insulator-metal (MIM) stacked polycrystalline high- κ capacitor of TiN-TiO2-ZrO2-TiO2-TiN. We assume that measured dielectric leakage current until the breakdown is comprised of transient transports under static fields: direct tunneling, trap-assisted tunneling (TAT), and inelastic tunneling. The charge transports induce trap generation and formation of stochastic trap-cluster. The generated trap-cluster amplified the stress-induced leakage current (SILC). One of the clusters can be expanded and electrically link the cathode and anode throughout the dielectric to form a critical path. We can model the current through this path analytically by partition function and percolation. By careful analysis of measured time-dependent dielectric leakage currents, we found that prebreakdown is most related to SILC and inelastic tunneling at a low electric field (< 4 MV/cm).

Original languageEnglish
Pages (from-to)4793-4799
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume70
Issue number9
DOIs
StatePublished - 1 Sep 2023

Keywords

  • Dielectric breakdown (DB)
  • metal-insulator-metal (MIM) capacitor
  • percolation
  • polycrystalline
  • stress-induced leakage current (SILC)
  • time-dependent DB (TDDB)
  • ZrO

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