Analysis and Design of Stacked-Nanosheet FeFET Synapse Conductance Response under Identical Pulse Scheme for Neuromorphic Applications

Heng Li Lin, Pin Su

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work investigates and analyzes the synapse response under the identical gate pulse stimulation scheme for Stacked-Nanosheet FeFET by using Monte Carlo nucleation-limited-switching (NLS) based model. Our study indicates that thinner EOT of interfacial layer and smaller saturated polarization (Ps) can be used to improve the linearity and symmetry of GDS due to smaller depolarization field. In addition, Stacked-Nanosheet structure can increase effective W/L without footprint penalty to boost G/Gmin.

Original languageEnglish
Title of host publication7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publicationStrengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350332520
DOIs
StatePublished - 2023
Event7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of
Duration: 7 Mar 202310 Mar 2023

Publication series

Name7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/TerritoryKorea, Republic of
CitySeoul
Period7/03/2310/03/23

Keywords

  • Stacked-Nanosheet FeFET
  • Synapse and Depolarization Field

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