Analyses of the influences of layout and process modifications on thin-film transistors with metal-induced lateral crystallized poly-Si nanowire channels

Chun Jung Su; Yu Feng Huang; Horng-Chih Lin; Tiao Yuan Huang

doi:10.1109/INEC.2011.5991716

Analyses of the influences of layout and process modifications on thin-film transistors with metal-induced lateral crystallized poly-Si nanowire channels

Chun Jung Su^*, Yu Feng Huang, Horng-Chih Lin, Tiao Yuan Huang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, we investigate the effects of layout design and re-crystallization temperature on the performance of poly-Si thin-film transistors (TFTs) with metal-induced lateral crystallized (MILC) nanowire (NW) channels. It is found that the off-state leakage current shows strong dependence on the arrangement of MILC seeding windows, while the on-state behavior could be enhanced at a lower re-crystallization temperature because of reducing smaller solid-phase-crystallized (SPC) grains in the channel.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991716
State	Published - 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 21 Jun 2011 → 24 Jun 2011

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Conference

Conference	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan
City	Tao-Yuan
Period	21/06/11 → 24/06/11

Keywords

metal-induced lateral crystallization
nanowire
thin-film transistor

Access to Document

10.1109/INEC.2011.5991716

Cite this

Su, C. J., Huang, Y. F., Lin, H.-C., & Huang, T. Y. (2011). Analyses of the influences of layout and process modifications on thin-film transistors with metal-induced lateral crystallized poly-Si nanowire channels. In 4th IEEE International NanoElectronics Conference, INEC 2011 Article 5991716 (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991716

@inproceedings{16d9dba1f9bb49808e5a94b5fb472326,

title = "Analyses of the influences of layout and process modifications on thin-film transistors with metal-induced lateral crystallized poly-Si nanowire channels",

abstract = "In this paper, we investigate the effects of layout design and re-crystallization temperature on the performance of poly-Si thin-film transistors (TFTs) with metal-induced lateral crystallized (MILC) nanowire (NW) channels. It is found that the off-state leakage current shows strong dependence on the arrangement of MILC seeding windows, while the on-state behavior could be enhanced at a lower re-crystallization temperature because of reducing smaller solid-phase-crystallized (SPC) grains in the channel.",

keywords = "metal-induced lateral crystallization, nanowire, thin-film transistor",

author = "Su, {Chun Jung} and Huang, {Yu Feng} and Horng-Chih Lin and Huang, {Tiao Yuan}",

year = "2011",

doi = "10.1109/INEC.2011.5991716",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

}

Su, CJ, Huang, YF, Lin, H-C & Huang, TY 2011, Analyses of the influences of layout and process modifications on thin-film transistors with metal-induced lateral crystallized poly-Si nanowire channels. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991716, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 21/06/11. https://doi.org/10.1109/INEC.2011.5991716

Analyses of the influences of layout and process modifications on thin-film transistors with metal-induced lateral crystallized poly-Si nanowire channels. / Su, Chun Jung; Huang, Yu Feng; Lin, Horng-Chih et al.
4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991716 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Analyses of the influences of layout and process modifications on thin-film transistors with metal-induced lateral crystallized poly-Si nanowire channels

AU - Su, Chun Jung

AU - Huang, Yu Feng

AU - Lin, Horng-Chih

AU - Huang, Tiao Yuan

PY - 2011

Y1 - 2011

N2 - In this paper, we investigate the effects of layout design and re-crystallization temperature on the performance of poly-Si thin-film transistors (TFTs) with metal-induced lateral crystallized (MILC) nanowire (NW) channels. It is found that the off-state leakage current shows strong dependence on the arrangement of MILC seeding windows, while the on-state behavior could be enhanced at a lower re-crystallization temperature because of reducing smaller solid-phase-crystallized (SPC) grains in the channel.

AB - In this paper, we investigate the effects of layout design and re-crystallization temperature on the performance of poly-Si thin-film transistors (TFTs) with metal-induced lateral crystallized (MILC) nanowire (NW) channels. It is found that the off-state leakage current shows strong dependence on the arrangement of MILC seeding windows, while the on-state behavior could be enhanced at a lower re-crystallization temperature because of reducing smaller solid-phase-crystallized (SPC) grains in the channel.

KW - metal-induced lateral crystallization

KW - nanowire

KW - thin-film transistor

UR - http://www.scopus.com/inward/record.url?scp=80053001991&partnerID=8YFLogxK

U2 - 10.1109/INEC.2011.5991716

DO - 10.1109/INEC.2011.5991716

M3 - Conference contribution

AN - SCOPUS:80053001991

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -

Analyses of the influences of layout and process modifications on thin-film transistors with metal-induced lateral crystallized poly-Si nanowire channels

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this