TY - GEN
T1 - Analog front-end circuit with low-noise amplifier and high-pass sigma-delta modulator for an EEG or ECoG acquisition system
AU - Hong, Jia Hua
AU - Liang, Ming Chun
AU - Haung, Ming Yang
AU - Tsai, Tsung Heng
AU - Fang, Qiang
AU - Lee, Shuenn Yuh
PY - 2011
Y1 - 2011
N2 - The present paper proposes an analog front-end (AFE) circuit, including only one low-noise amplifier with chopping techniques and one high-pass sigma-delta modulator (HPSDM), which can be applied as a sensing circuit for electroencephalogram or electrocorticogram (ECoG) signal acquisition systems. The low-noise amplifier, which has a close-loop gain of 20 V/V and CMRR of 109.6 dB, is implemented by a differential difference amplifier with feedback pseudo-resistors and capacitors. The HPSDM is implemented in a feed-forward architecture with an order of 3, an oversampling ratio of 128, and a 1-bit quantizer under a sampling frequency of 51.2 kHz. The TSMC 0.18 μm 1P6M CMOS process is used in the entire AFE circuit with a supply voltage of 1.2 V and power consumption of 28.7 μW. Within the maximum range of ECoG signals, the simulated SNR and SFDR of the entire AFE circuits are 70.8 and 73 dB, respectively.
AB - The present paper proposes an analog front-end (AFE) circuit, including only one low-noise amplifier with chopping techniques and one high-pass sigma-delta modulator (HPSDM), which can be applied as a sensing circuit for electroencephalogram or electrocorticogram (ECoG) signal acquisition systems. The low-noise amplifier, which has a close-loop gain of 20 V/V and CMRR of 109.6 dB, is implemented by a differential difference amplifier with feedback pseudo-resistors and capacitors. The HPSDM is implemented in a feed-forward architecture with an order of 3, an oversampling ratio of 128, and a 1-bit quantizer under a sampling frequency of 51.2 kHz. The TSMC 0.18 μm 1P6M CMOS process is used in the entire AFE circuit with a supply voltage of 1.2 V and power consumption of 28.7 μW. Within the maximum range of ECoG signals, the simulated SNR and SFDR of the entire AFE circuits are 70.8 and 73 dB, respectively.
UR - http://www.scopus.com/inward/record.url?scp=84862909841&partnerID=8YFLogxK
U2 - 10.1109/ISBB.2011.6107634
DO - 10.1109/ISBB.2011.6107634
M3 - Conference contribution
AN - SCOPUS:84862909841
SN - 9781457700774
T3 - Proceedings of 2011 International Symposium on Bioelectronics and Bioinformatics, ISBB 2011
SP - 17
EP - 20
BT - Proceedings of 2011 International Symposium on Bioelectronics and Bioinformatics, ISBB 2011
T2 - 2nd International Symposium on Bioelectronics and Bioinformatics, ISBB 2011
Y2 - 3 November 2011 through 5 November 2011
ER -