An oxide-buffered BE-MANOS charge-trapping device and the role of Al 2O3

Sheng Chih Lai; Hang Ting Lue; Chien Wei Liao; Yu Fong Huang; Ming Jui Yang; Yi Hsien Lue; Tai Bor Wu; Jung Yu Hsieh; Szu Yu Wang; Shih Ping Hong; Fang Hao Hsu; Chih Yen Shen; Guang Li Luo; Chao-Hsin Chien; Kuang Yeu Hsieh; Rich Liu; Chih Yuan Lu

doi:10.1109/NVSMW.2008.35

An oxide-buffered BE-MANOS charge-trapping device and the role of Al ₂O₃

Sheng Chih Lai^*, Hang Ting Lue, Chien Wei Liao, Yu Fong Huang, Ming Jui Yang, Yi Hsien Lue, Tai Bor Wu, Jung Yu Hsieh, Szu Yu Wang, Shih Ping Hong, Fang Hao Hsu, Chih Yen Shen, Guang Li Luo, Chao-Hsin Chien, Kuang Yeu Hsieh, Rich Liu, Chih Yuan Lu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

16 Scopus citations

Abstract

The role of Al₂O₃ in MANOS device is critically examined, and we conclude that its primary function is to reduce gate injection during erase operation. By itself, Al₂O₃ cannot stop charge leakage from the charge-trapping nitride layer. Furthermore, Al ₂O₃ provides no magic during the erase operation, and MANOS erases very slowly through charge de-trapping. BE-SONOS [1], with the band engineered ONO tunneling layers, provides efficient channel hole injection for erase. BE-MANOS [2] should be an ideal combination with fast erase and good reliability. However, it shows poor data retention. By inserting a SiO ₂ buffer layer between Al2O3 and the SiN storage layer, the oxide-buffered BE-MANOS shows good performance and good reliability. The EOT scalability is also investigated.

Original language	English
Title of host publication	2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD
Pages	101-102
Number of pages	2
DOIs	https://doi.org/10.1109/NVSMW.2008.35
State	Published - 2008
Event	2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, NVSMW/ICMTD - Opio, France Duration: 18 May 2008 → 22 May 2008

Publication series

Name	2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Conference

Conference	2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, NVSMW/ICMTD
Country/Territory	France
City	Opio
Period	18/05/08 → 22/05/08

Access to Document

10.1109/NVSMW.2008.35

Cite this

Lai, S. C., Lue, H. T., Liao, C. W., Huang, Y. F., Yang, M. J., Lue, Y. H., Wu, T. B., Hsieh, J. Y., Wang, S. Y., Hong, S. P., Hsu, F. H., Shen, C. Y., Luo, G. L., Chien, C.-H., Hsieh, K. Y., Liu, R., & Lu, C. Y. (2008). An oxide-buffered BE-MANOS charge-trapping device and the role of Al ₂O₃. In 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD (pp. 101-102). Article 4531835 (2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD). https://doi.org/10.1109/NVSMW.2008.35

Lai, Sheng Chih ; Lue, Hang Ting ; Liao, Chien Wei et al. / An oxide-buffered BE-MANOS charge-trapping device and the role of Al ₂O₃. 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD. 2008. pp. 101-102 (2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD).

@inproceedings{a285c928a8c948fa86970284869768e5,

title = "An oxide-buffered BE-MANOS charge-trapping device and the role of Al 2O3",

abstract = "The role of Al2O3 in MANOS device is critically examined, and we conclude that its primary function is to reduce gate injection during erase operation. By itself, Al2O3 cannot stop charge leakage from the charge-trapping nitride layer. Furthermore, Al 2O3 provides no magic during the erase operation, and MANOS erases very slowly through charge de-trapping. BE-SONOS [1], with the band engineered ONO tunneling layers, provides efficient channel hole injection for erase. BE-MANOS [2] should be an ideal combination with fast erase and good reliability. However, it shows poor data retention. By inserting a SiO 2 buffer layer between Al2O3 and the SiN storage layer, the oxide-buffered BE-MANOS shows good performance and good reliability. The EOT scalability is also investigated.",

author = "Lai, {Sheng Chih} and Lue, {Hang Ting} and Liao, {Chien Wei} and Huang, {Yu Fong} and Yang, {Ming Jui} and Lue, {Yi Hsien} and Wu, {Tai Bor} and Hsieh, {Jung Yu} and Wang, {Szu Yu} and Hong, {Shih Ping} and Hsu, {Fang Hao} and Shen, {Chih Yen} and Luo, {Guang Li} and Chao-Hsin Chien and Hsieh, {Kuang Yeu} and Rich Liu and Lu, {Chih Yuan}",

year = "2008",

doi = "10.1109/NVSMW.2008.35",

language = "English",

isbn = "1424415462",

series = "2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD",

pages = "101--102",

booktitle = "2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD",

note = "2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, NVSMW/ICMTD ; Conference date: 18-05-2008 Through 22-05-2008",

}

Lai, SC, Lue, HT, Liao, CW, Huang, YF, Yang, MJ, Lue, YH, Wu, TB, Hsieh, JY, Wang, SY, Hong, SP, Hsu, FH, Shen, CY, Luo, GL, Chien, C-H, Hsieh, KY, Liu, R & Lu, CY 2008, An oxide-buffered BE-MANOS charge-trapping device and the role of Al ₂O₃. in 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD., 4531835, 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD, pp. 101-102, 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, NVSMW/ICMTD, Opio, France, 18/05/08. https://doi.org/10.1109/NVSMW.2008.35

An oxide-buffered BE-MANOS charge-trapping device and the role of Al ₂O₃. / Lai, Sheng Chih; Lue, Hang Ting; Liao, Chien Wei et al.
2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD. 2008. p. 101-102 4531835 (2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - An oxide-buffered BE-MANOS charge-trapping device and the role of Al 2O3

AU - Lai, Sheng Chih

AU - Lue, Hang Ting

AU - Liao, Chien Wei

AU - Huang, Yu Fong

AU - Yang, Ming Jui

AU - Lue, Yi Hsien

AU - Wu, Tai Bor

AU - Hsieh, Jung Yu

AU - Wang, Szu Yu

AU - Hong, Shih Ping

AU - Hsu, Fang Hao

AU - Shen, Chih Yen

AU - Luo, Guang Li

AU - Chien, Chao-Hsin

AU - Hsieh, Kuang Yeu

AU - Liu, Rich

AU - Lu, Chih Yuan

PY - 2008

Y1 - 2008

N2 - The role of Al2O3 in MANOS device is critically examined, and we conclude that its primary function is to reduce gate injection during erase operation. By itself, Al2O3 cannot stop charge leakage from the charge-trapping nitride layer. Furthermore, Al 2O3 provides no magic during the erase operation, and MANOS erases very slowly through charge de-trapping. BE-SONOS [1], with the band engineered ONO tunneling layers, provides efficient channel hole injection for erase. BE-MANOS [2] should be an ideal combination with fast erase and good reliability. However, it shows poor data retention. By inserting a SiO 2 buffer layer between Al2O3 and the SiN storage layer, the oxide-buffered BE-MANOS shows good performance and good reliability. The EOT scalability is also investigated.

AB - The role of Al2O3 in MANOS device is critically examined, and we conclude that its primary function is to reduce gate injection during erase operation. By itself, Al2O3 cannot stop charge leakage from the charge-trapping nitride layer. Furthermore, Al 2O3 provides no magic during the erase operation, and MANOS erases very slowly through charge de-trapping. BE-SONOS [1], with the band engineered ONO tunneling layers, provides efficient channel hole injection for erase. BE-MANOS [2] should be an ideal combination with fast erase and good reliability. However, it shows poor data retention. By inserting a SiO 2 buffer layer between Al2O3 and the SiN storage layer, the oxide-buffered BE-MANOS shows good performance and good reliability. The EOT scalability is also investigated.

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U2 - 10.1109/NVSMW.2008.35

DO - 10.1109/NVSMW.2008.35

M3 - Conference contribution

AN - SCOPUS:50249101160

SN - 1424415462

SN - 9781424415465

T3 - 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

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BT - 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

T2 - 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, NVSMW/ICMTD

Y2 - 18 May 2008 through 22 May 2008

ER -

Lai SC, Lue HT, Liao CW, Huang YF, Yang MJ, Lue YH et al. An oxide-buffered BE-MANOS charge-trapping device and the role of Al ₂O₃. In 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD. 2008. p. 101-102. 4531835. (2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD). doi: 10.1109/NVSMW.2008.35