An Offset Readout Current Sensing Scheme for One-Resistor RRAM-Based Cross-Point Array

You Da Chen; Albert Chin

doi:10.1109/LED.2018.2886552

An Offset Readout Current Sensing Scheme for One-Resistor RRAM-Based Cross-Point Array

You Da Chen, Albert Chin^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The uneven sneak-path currents in resistive random access memory (RRAM) severely constrain the array size. To overcome this issue, we propose an innovative readout scheme that can fully offset the sneak-path currents in one-resistor (1R) RRAM array. Furthermore, the bit cell resistance (Rcell) in an RRAM array can be simply evaluated as the ratio of read voltage (Vread) to the sensed offset current (Ioffset). Even under extreme device distribution, a 512× 512 array size is still obtained. This is the largest array among simple 1R RRAM, without using a selector device or extra transistor.

Original language	English
Article number	8574911
Pages (from-to)	208-211
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	40
Issue number	2
DOIs	https://doi.org/10.1109/LED.2018.2886552
State	Published - Feb 2019

Keywords

Nonvolatile
cross-point array
current sensing
resistive random access memory (RRAM)
sneak current

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10.1109/LED.2018.2886552

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title = "An Offset Readout Current Sensing Scheme for One-Resistor RRAM-Based Cross-Point Array",

abstract = "The uneven sneak-path currents in resistive random access memory (RRAM) severely constrain the array size. To overcome this issue, we propose an innovative readout scheme that can fully offset the sneak-path currents in one-resistor (1R) RRAM array. Furthermore, the bit cell resistance (Rcell) in an RRAM array can be simply evaluated as the ratio of read voltage (Vread) to the sensed offset current (Ioffset). Even under extreme device distribution, a 512× 512 array size is still obtained. This is the largest array among simple 1R RRAM, without using a selector device or extra transistor.",

keywords = "Nonvolatile, cross-point array, current sensing, resistive random access memory (RRAM), sneak current",

author = "Chen, {You Da} and Albert Chin",

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AB - The uneven sneak-path currents in resistive random access memory (RRAM) severely constrain the array size. To overcome this issue, we propose an innovative readout scheme that can fully offset the sneak-path currents in one-resistor (1R) RRAM array. Furthermore, the bit cell resistance (Rcell) in an RRAM array can be simply evaluated as the ratio of read voltage (Vread) to the sensed offset current (Ioffset). Even under extreme device distribution, a 512× 512 array size is still obtained. This is the largest array among simple 1R RRAM, without using a selector device or extra transistor.

KW - Nonvolatile

KW - cross-point array

KW - current sensing

KW - resistive random access memory (RRAM)

KW - sneak current

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ER -

An Offset Readout Current Sensing Scheme for One-Resistor RRAM-Based Cross-Point Array

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Keywords

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