Multiple variants of SiGe HBTs using select collector implant suitable for wired and wireless applications were explored. RF/Analog characteristics of HBTs featured with fT/BVcEo values of 130GHz/2.3V, 80GHz/3.4V and 60GHz/4.8V were characterized. The dependence of bias, temperature, frequency, noise, power, and geometry were investigated to provide designers with appropriate performance-breakdown design coverage and flexibility.
|Number of pages||4|
|Journal||Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting|
|State||Published - 2004|
|Event||Proceedings of the 2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Montreal, Que., Canada|
Duration: 13 Sep 2004 → 14 Sep 2004