An investigation of the RF/analog characteristics of multiple variants SiGe HBTs for optical and wireless applications

M. T. Yang*, Darryl C.W. Kuo, Patricia P.C. Ho, C. W. Kuo, T. J. Yen, Alan K.L. Chang, C. Y. Lee, Y. T. Chia, G. J. Chern, K. L. Young, Denny D. Tang, Jack Y.C. Sun

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

Multiple variants of SiGe HBTs using select collector implant suitable for wired and wireless applications were explored. RF/Analog characteristics of HBTs featured with fT/BVcEo values of 130GHz/2.3V, 80GHz/3.4V and 60GHz/4.8V were characterized. The dependence of bias, temperature, frequency, noise, power, and geometry were investigated to provide designers with appropriate performance-breakdown design coverage and flexibility.

Original languageEnglish
Pages (from-to)88-91
Number of pages4
JournalProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
StatePublished - 2004
EventProceedings of the 2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Montreal, Que., Canada
Duration: 13 Sep 200414 Sep 2004

Fingerprint

Dive into the research topics of 'An investigation of the RF/analog characteristics of multiple variants SiGe HBTs for optical and wireless applications'. Together they form a unique fingerprint.

Cite this