An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate

S. C. Chen; J. C. Lou; Chao-Hsin Chien; Po-Tsun Liu; T. C. Chang

doi:10.1016/j.tsf.2005.01.023

An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate

S. C. Chen^*, J. C. Lou, Chao-Hsin Chien, Po-Tsun Liu, T. C. Chang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

In this study, the hump in the capacitance-voltage (C-V) curves, variation of leakage current, interfacial layer increase, and electron trapping in non-surface treated hafnium oxide (HfO₂) samples were observed and investigated. From the results of the investigation, it was found that both rapid thermal oxidation and NH₃ surface treatments improved the C-V curves. In addition, it was observed that samples treated with ammonia exhibited a lower leakage current when compared with the others. From the results of the dielectric leakage current study, a severe electron trapping effect was exhibited under higher electric field stress. Finally, the conduction mechanism in the HfO₂ thin film was dominated by Frenkel-Poole emission in a high electric field.

Original language	English
Pages (from-to)	167-172
Number of pages	6
Journal	Thin Solid Films
Volume	488
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.01.023
State	Published - 22 Sep 2005

Keywords

Dielectrics
Electrical properties and measurements
Surface and interface state
Transmission electron microscopy (TEM)

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10.1016/j.tsf.2005.01.023

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@article{f2d7b6600ff44c9782da44d97894a460,

title = "An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate",

abstract = "In this study, the hump in the capacitance-voltage (C-V) curves, variation of leakage current, interfacial layer increase, and electron trapping in non-surface treated hafnium oxide (HfO2) samples were observed and investigated. From the results of the investigation, it was found that both rapid thermal oxidation and NH3 surface treatments improved the C-V curves. In addition, it was observed that samples treated with ammonia exhibited a lower leakage current when compared with the others. From the results of the dielectric leakage current study, a severe electron trapping effect was exhibited under higher electric field stress. Finally, the conduction mechanism in the HfO2 thin film was dominated by Frenkel-Poole emission in a high electric field.",

keywords = "Dielectrics, Electrical properties and measurements, Surface and interface state, Transmission electron microscopy (TEM)",

author = "Chen, {S. C.} and Lou, {J. C.} and Chao-Hsin Chien and Po-Tsun Liu and Chang, {T. C.}",

year = "2005",

month = sep,

day = "22",

doi = "10.1016/j.tsf.2005.01.023",

language = "English",

volume = "488",

pages = "167--172",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate

AU - Chen, S. C.

AU - Lou, J. C.

AU - Chien, Chao-Hsin

AU - Liu, Po-Tsun

AU - Chang, T. C.

PY - 2005/9/22

Y1 - 2005/9/22

N2 - In this study, the hump in the capacitance-voltage (C-V) curves, variation of leakage current, interfacial layer increase, and electron trapping in non-surface treated hafnium oxide (HfO2) samples were observed and investigated. From the results of the investigation, it was found that both rapid thermal oxidation and NH3 surface treatments improved the C-V curves. In addition, it was observed that samples treated with ammonia exhibited a lower leakage current when compared with the others. From the results of the dielectric leakage current study, a severe electron trapping effect was exhibited under higher electric field stress. Finally, the conduction mechanism in the HfO2 thin film was dominated by Frenkel-Poole emission in a high electric field.

AB - In this study, the hump in the capacitance-voltage (C-V) curves, variation of leakage current, interfacial layer increase, and electron trapping in non-surface treated hafnium oxide (HfO2) samples were observed and investigated. From the results of the investigation, it was found that both rapid thermal oxidation and NH3 surface treatments improved the C-V curves. In addition, it was observed that samples treated with ammonia exhibited a lower leakage current when compared with the others. From the results of the dielectric leakage current study, a severe electron trapping effect was exhibited under higher electric field stress. Finally, the conduction mechanism in the HfO2 thin film was dominated by Frenkel-Poole emission in a high electric field.

KW - Dielectrics

KW - Electrical properties and measurements

KW - Surface and interface state

KW - Transmission electron microscopy (TEM)

UR - http://www.scopus.com/inward/record.url?scp=23044473424&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.01.023

DO - 10.1016/j.tsf.2005.01.023

M3 - Article

AN - SCOPUS:23044473424

SN - 0040-6090

VL - 488

SP - 167

EP - 172

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate

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