An Improved Robust Infinitely Differentiable Drift Resistance Model for BSIM High Voltage Compact Model

Anant Singhal; Garima Gill; Girish Pahwa; Chenming Hu; Harshit Agarwal

doi:10.1109/EDTM55494.2023.10103122

An Improved Robust Infinitely Differentiable Drift Resistance Model for BSIM High Voltage Compact Model

Anant Singhal, Garima Gill, Girish Pahwa, Chenming Hu, Harshit Agarwal

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Symmetry, continuity, differentiability, accuracy and efficiency are the essential requirements of a compact model. To ensure this need, in this work, we implement two major updates in drift resistance model in BSIM-High Voltage (HV) compact model. The updated model is faster while ensuring infinite continuity and differentiability around Vds=OV, leading to correct slope of harmonics. The model is validated with the numerical simulated and experimental data of HV transistors.

Original language	English
Title of host publication	7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10103122
State	Published - 2023
Event	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: 7 Mar 2023 → 10 Mar 2023

Publication series

Name	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/Territory	Korea, Republic of
City	Seoul
Period	7/03/23 → 10/03/23

Keywords

BSIM-BULK
Gummel Symmetry test
Harmonic Balance test
LDMOS

Access to Document

10.1109/EDTM55494.2023.10103122

Cite this

Singhal, A., Gill, G., Pahwa, G., Hu, C., & Agarwal, H. (2023). An Improved Robust Infinitely Differentiable Drift Resistance Model for BSIM High Voltage Compact Model. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10103122

Singhal, Anant ; Gill, Garima ; Pahwa, Girish et al. / An Improved Robust Infinitely Differentiable Drift Resistance Model for BSIM High Voltage Compact Model. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

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title = "An Improved Robust Infinitely Differentiable Drift Resistance Model for BSIM High Voltage Compact Model",

abstract = "Symmetry, continuity, differentiability, accuracy and efficiency are the essential requirements of a compact model. To ensure this need, in this work, we implement two major updates in drift resistance model in BSIM-High Voltage (HV) compact model. The updated model is faster while ensuring infinite continuity and differentiability around Vds=OV, leading to correct slope of harmonics. The model is validated with the numerical simulated and experimental data of HV transistors.",

keywords = "BSIM-BULK, Gummel Symmetry test, Harmonic Balance test, LDMOS",

author = "Anant Singhal and Garima Gill and Girish Pahwa and Chenming Hu and Harshit Agarwal",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",

year = "2023",

doi = "10.1109/EDTM55494.2023.10103122",

language = "English",

series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",

address = "United States",

}

Singhal, A, Gill, G, Pahwa, G , Hu, C & Agarwal, H 2023, An Improved Robust Infinitely Differentiable Drift Resistance Model for BSIM High Voltage Compact Model. in 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, Korea, Republic of, 7/03/23. https://doi.org/10.1109/EDTM55494.2023.10103122

An Improved Robust Infinitely Differentiable Drift Resistance Model for BSIM High Voltage Compact Model. / Singhal, Anant; Gill, Garima; Pahwa, Girish et al.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Gill, Garima

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AU - Hu, Chenming

AU - Agarwal, Harshit

PY - 2023

Y1 - 2023

N2 - Symmetry, continuity, differentiability, accuracy and efficiency are the essential requirements of a compact model. To ensure this need, in this work, we implement two major updates in drift resistance model in BSIM-High Voltage (HV) compact model. The updated model is faster while ensuring infinite continuity and differentiability around Vds=OV, leading to correct slope of harmonics. The model is validated with the numerical simulated and experimental data of HV transistors.

AB - Symmetry, continuity, differentiability, accuracy and efficiency are the essential requirements of a compact model. To ensure this need, in this work, we implement two major updates in drift resistance model in BSIM-High Voltage (HV) compact model. The updated model is faster while ensuring infinite continuity and differentiability around Vds=OV, leading to correct slope of harmonics. The model is validated with the numerical simulated and experimental data of HV transistors.

KW - BSIM-BULK

KW - Gummel Symmetry test

KW - Harmonic Balance test

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M3 - Conference contribution

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Singhal A, Gill G, Pahwa G , Hu C, Agarwal H. An Improved Robust Infinitely Differentiable Drift Resistance Model for BSIM High Voltage Compact Model. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10103122

An Improved Robust Infinitely Differentiable Drift Resistance Model for BSIM High Voltage Compact Model

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