An impact ionization model for SOI circuit simulation

Pin Su; S. K.H. Fung; H. Wan; A. Niknejad; M. Chan; Chen-Ming Hu

An impact ionization model for SOI circuit simulation

Pin Su^*, S. K.H. Fung, H. Wan, A. Niknejad, M. Chan, Chen-Ming Hu

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

8 Scopus citations

Abstract

An impact ionization model for SOI circuit simulation was discussed. This model was based on the thermal activation energy theory to capture the SOI device characteristics. The results show that the impact of current kink at low V_D become increasingly important in SOI MOSFETs with power supply scaling below 1.2V.

Original language	English
Pages	201-202
Number of pages	2
State	Published - 2002
Event	IEEE International SOI Conference - Williamsburg, VA, United States Duration: 7 Oct 2002 → 10 Oct 2002

Conference

Conference	IEEE International SOI Conference
Country/Territory	United States
City	Williamsburg, VA
Period	7/10/02 → 10/10/02

Cite this

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title = "An impact ionization model for SOI circuit simulation",

abstract = "An impact ionization model for SOI circuit simulation was discussed. This model was based on the thermal activation energy theory to capture the SOI device characteristics. The results show that the impact of current kink at low VD become increasingly important in SOI MOSFETs with power supply scaling below 1.2V.",

author = "Pin Su and Fung, {S. K.H.} and H. Wan and A. Niknejad and M. Chan and Chen-Ming Hu",

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pages = "201--202",

note = "IEEE International SOI Conference ; Conference date: 07-10-2002 Through 10-10-2002",

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T1 - An impact ionization model for SOI circuit simulation

AU - Su, Pin

AU - Fung, S. K.H.

AU - Wan, H.

AU - Niknejad, A.

AU - Chan, M.

AU - Hu, Chen-Ming

PY - 2002

Y1 - 2002

N2 - An impact ionization model for SOI circuit simulation was discussed. This model was based on the thermal activation energy theory to capture the SOI device characteristics. The results show that the impact of current kink at low VD become increasingly important in SOI MOSFETs with power supply scaling below 1.2V.

AB - An impact ionization model for SOI circuit simulation was discussed. This model was based on the thermal activation energy theory to capture the SOI device characteristics. The results show that the impact of current kink at low VD become increasingly important in SOI MOSFETs with power supply scaling below 1.2V.

UR - http://www.scopus.com/inward/record.url?scp=0036458326&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036458326

SP - 201

EP - 202

T2 - IEEE International SOI Conference

Y2 - 7 October 2002 through 10 October 2002

ER -

An impact ionization model for SOI circuit simulation

Abstract

Conference

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