An Exothermic Phenomenon of Silicon Oxidation by N2O

Tien-Sheng Chao; Wen Ho Chen; S. C. Sun; Hong Yi Chang

doi:10.1149/1.2221036

An Exothermic Phenomenon of Silicon Oxidation by N₂O

Tien-Sheng Chao, Wen Ho Chen, S. C. Sun, Hong Yi Chang

Department of Electrophysics

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Abstract

In this paper we first report an exothermic phenomenon of silicon oxidation by N₂O. This phenomenon results from the decomposition of N₂O at high temperature. The heat generated by introducing N₂O increases the furnace temperature during the oxidation process and results in an increased oxide thickness. To control temperature well, we developed a two–table profiling technique to obtain a more stable processing temperature. We also found the growth kinetic of N₂O decomposed into N₂ and O₂ is similar to dilute O₂(10%)/Ar.

Original language	English
Pages (from-to)	L160-L161
Journal	Journal of the Electrochemical Society
Volume	140
Issue number	11
DOIs	https://doi.org/10.1149/1.2221036
State	Published - 1 Jan 1993

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title = "An Exothermic Phenomenon of Silicon Oxidation by N2O",

abstract = "In this paper we first report an exothermic phenomenon of silicon oxidation by N2O. This phenomenon results from the decomposition of N2O at high temperature. The heat generated by introducing N2O increases the furnace temperature during the oxidation process and results in an increased oxide thickness. To control temperature well, we developed a two–table profiling technique to obtain a more stable processing temperature. We also found the growth kinetic of N2O decomposed into N2 and O2 is similar to dilute O2(10%)/Ar.",

author = "Tien-Sheng Chao and Chen, {Wen Ho} and Sun, {S. C.} and Chang, {Hong Yi}",

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N2 - In this paper we first report an exothermic phenomenon of silicon oxidation by N2O. This phenomenon results from the decomposition of N2O at high temperature. The heat generated by introducing N2O increases the furnace temperature during the oxidation process and results in an increased oxide thickness. To control temperature well, we developed a two–table profiling technique to obtain a more stable processing temperature. We also found the growth kinetic of N2O decomposed into N2 and O2 is similar to dilute O2(10%)/Ar.

AB - In this paper we first report an exothermic phenomenon of silicon oxidation by N2O. This phenomenon results from the decomposition of N2O at high temperature. The heat generated by introducing N2O increases the furnace temperature during the oxidation process and results in an increased oxide thickness. To control temperature well, we developed a two–table profiling technique to obtain a more stable processing temperature. We also found the growth kinetic of N2O decomposed into N2 and O2 is similar to dilute O2(10%)/Ar.

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

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ER -

An Exothermic Phenomenon of Silicon Oxidation by N₂O

Abstract

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