Abstract
This article proposes a supply modulator (SM) that uses high switching frequency gallium-nitride (GaN) devices to achieve a four-phase fast step-down converter for the fast-tracking ability of the envelope tracking (ET). The ET signal is reshaped to generate an average power tracking (APT)-based signal to control the size of GaN switches to further increase light-load efficiency due to reduced switching loss. Moreover, a high-bandwidth and low-loss linear amplifier (LA) is used to supply the power amplifier (PA) to sufficiently provide fast-tracking speed for 5th generation (5G) NR ET. At a power of 3.5 W for 5G mobile phones, the peak efficiency that is tested with NR -130 MHz in the ET mode is as high as 85.7% over a wide load range.
Original language | English |
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Pages (from-to) | 3167 - 3176 |
Number of pages | 10 |
Journal | IEEE Journal of Solid-State Circuits |
Volume | 56 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2021 |
Keywords
- 5G mobile communication
- Amplitude modulation
- Bandwidth
- Envelope tracking (ET)
- envelope tracking supply modulator (ETSM)
- gallium nitride (GaN)
- HEMTs
- integrated GaN driver
- multiphase control.
- Peak to average power ratio
- Switches
- Switching converters