An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature

  • Wei Lee*
  • , Pin Su
  • , Hou Yu Chen
  • , Chang Yun Chang
  • , Ke Wei Su
  • , Sally Liu
  • , Fu Liang Yang
  • *Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

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