An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature

Wei Lee; Pin Su; Hou Yu Chen; Chang Yun Chang; Ke Wei Su; Sally Liu; Fu Liang Yang

doi:10.1109/ISDRS.2005.1596039

An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature

Wei Lee^*, Pin Su, Hou Yu Chen, Chang Yun Chang, Ke Wei Su, Sally Liu, Fu Liang Yang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2005 International Semiconductor Device Research Symposium
Pages	175-176
Number of pages	2
DOIs	https://doi.org/10.1109/ISDRS.2005.1596039
State	Published - 1 Dec 2005
Event	2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States Duration: 7 Dec 2005 → 9 Dec 2005

Publication series

Name	2005 International Semiconductor Device Research Symposium
Volume	2005

Conference

Conference	2005 International Semiconductor Device Research Symposium
Country/Territory	United States
City	Bethesda, MD
Period	7/12/05 → 9/12/05

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10.1109/ISDRS.2005.1596039

Cite this

Lee, W., Su, P., Chen, H. Y., Chang, C. Y., Su, K. W., Liu, S., & Yang, F. L. (2005). An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature. In 2005 International Semiconductor Device Research Symposium (pp. 175-176). Article 1596039 (2005 International Semiconductor Device Research Symposium; Vol. 2005). https://doi.org/10.1109/ISDRS.2005.1596039

@inproceedings{c472bbc464d54749b9d6d648848d3082,

title = "An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature",

author = "Wei Lee and Pin Su and Chen, {Hou Yu} and Chang, {Chang Yun} and Su, {Ke Wei} and Sally Liu and Yang, {Fu Liang}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/ISDRS.2005.1596039",

language = "English",

isbn = "1424400848",

series = "2005 International Semiconductor Device Research Symposium",

pages = "175--176",

booktitle = "2005 International Semiconductor Device Research Symposium",

note = "2005 International Semiconductor Device Research Symposium ; Conference date: 07-12-2005 Through 09-12-2005",

}

Lee, W, Su, P, Chen, HY, Chang, CY, Su, KW, Liu, S & Yang, FL 2005, An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature. in 2005 International Semiconductor Device Research Symposium., 1596039, 2005 International Semiconductor Device Research Symposium, vol. 2005, pp. 175-176, 2005 International Semiconductor Device Research Symposium, Bethesda, MD, United States, 7/12/05. https://doi.org/10.1109/ISDRS.2005.1596039

An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature. / Lee, Wei; Su, Pin; Chen, Hou Yu et al.
2005 International Semiconductor Device Research Symposium. 2005. p. 175-176 1596039 (2005 International Semiconductor Device Research Symposium; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature

AU - Lee, Wei

AU - Su, Pin

AU - Chen, Hou Yu

AU - Chang, Chang Yun

AU - Su, Ke Wei

AU - Liu, Sally

AU - Yang, Fu Liang

PY - 2005/12/1

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U2 - 10.1109/ISDRS.2005.1596039

DO - 10.1109/ISDRS.2005.1596039

M3 - Conference contribution

AN - SCOPUS:33847203273

SN - 1424400848

SN - 9781424400843

T3 - 2005 International Semiconductor Device Research Symposium

SP - 175

EP - 176

BT - 2005 International Semiconductor Device Research Symposium

T2 - 2005 International Semiconductor Device Research Symposium

Y2 - 7 December 2005 through 9 December 2005

ER -

An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature

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