An analytical model for the power bipolar-MOS transistor

Di Son Kuo; Chen-Ming Hu; Steven P. Sapp

doi:10.1016/0038-1101(86)90128-0

An analytical model for the power bipolar-MOS transistor

Di Son Kuo^*, Chen-Ming Hu, Steven P. Sapp

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

This paper presents an analytical model for the I-V characteristics of the bipolar-MOS power transistor, also known as IGT or COMFET. Good agreement between this model and experiments is found over a wide range of carrier lifetime and current density. The predicted trade-off between the forward voltage drop and device turn-off time (0.4-10 μsec) has been verified by experiment. For even shorter switching time, the model predicts only a moderate increase in V_F. Adding a more heavily doped buffer epitaxial layer is shown to only slightly increase V_F but offers several important benefits. The comparison between n-channel and p-channel devices is discussed using the model and the forward voltage drops for the two types of devices are shown to differ by only a small percentage in spite of the large difference in electron and hole mobilities.

Original language	English
Pages (from-to)	1229-1237
Number of pages	9
Journal	Solid State Electronics
Volume	29
Issue number	12
DOIs	https://doi.org/10.1016/0038-1101(86)90128-0
State	Published - 1 Jan 1986

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title = "An analytical model for the power bipolar-MOS transistor",

abstract = "This paper presents an analytical model for the I-V characteristics of the bipolar-MOS power transistor, also known as IGT or COMFET. Good agreement between this model and experiments is found over a wide range of carrier lifetime and current density. The predicted trade-off between the forward voltage drop and device turn-off time (0.4-10 μsec) has been verified by experiment. For even shorter switching time, the model predicts only a moderate increase in VF. Adding a more heavily doped buffer epitaxial layer is shown to only slightly increase VF but offers several important benefits. The comparison between n-channel and p-channel devices is discussed using the model and the forward voltage drops for the two types of devices are shown to differ by only a small percentage in spite of the large difference in electron and hole mobilities.",

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N2 - This paper presents an analytical model for the I-V characteristics of the bipolar-MOS power transistor, also known as IGT or COMFET. Good agreement between this model and experiments is found over a wide range of carrier lifetime and current density. The predicted trade-off between the forward voltage drop and device turn-off time (0.4-10 μsec) has been verified by experiment. For even shorter switching time, the model predicts only a moderate increase in VF. Adding a more heavily doped buffer epitaxial layer is shown to only slightly increase VF but offers several important benefits. The comparison between n-channel and p-channel devices is discussed using the model and the forward voltage drops for the two types of devices are shown to differ by only a small percentage in spite of the large difference in electron and hole mobilities.

AB - This paper presents an analytical model for the I-V characteristics of the bipolar-MOS power transistor, also known as IGT or COMFET. Good agreement between this model and experiments is found over a wide range of carrier lifetime and current density. The predicted trade-off between the forward voltage drop and device turn-off time (0.4-10 μsec) has been verified by experiment. For even shorter switching time, the model predicts only a moderate increase in VF. Adding a more heavily doped buffer epitaxial layer is shown to only slightly increase VF but offers several important benefits. The comparison between n-channel and p-channel devices is discussed using the model and the forward voltage drops for the two types of devices are shown to differ by only a small percentage in spite of the large difference in electron and hole mobilities.

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An analytical model for the power bipolar-MOS transistor

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