An Alternative Way for Reconfigurable Logic-in-Memory with Ferroelectric FET

Wei Xiang You, Bo Kai Huang, Pin Su*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Single ferroelectric-FET (FeFET) reconfigurable logic-in-memory is an attractive beyond-von-Neumann scheme for data-centric computing. Different from using body-to-source voltage to tune the operating point of the FeFET for reconfigurability, this brief presents an alternative approach based on the unique ferroelectric minor-loop behavior (which results from the partial switching of domains). Through simulation, we show that the NAND/ NOR reconfigurability can theoretically be achieved by adequately modulating the reference and writing pulses for the FeFET nonvolatile memory (NVM). Our approach may serve as an option when the body-effect capability is lacking for nonplanar FeFETs or 3-D stacked FeFETs which can be crucial to future high-density integration.

Original languageEnglish
Pages (from-to)444-446
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume69
Issue number1
DOIs
StatePublished - 1 Jan 2022

Keywords

  • Ferroelectric FET (FeFET)
  • Logic-in-memory
  • Nonvolatile memory (NVM)

Fingerprint

Dive into the research topics of 'An Alternative Way for Reconfigurable Logic-in-Memory with Ferroelectric FET'. Together they form a unique fingerprint.

Cite this