Single ferroelectric-FET (FeFET) reconfigurable logic-in-memory is an attractive beyond-von-Neumann scheme for data-centric computing. Different from using body-to-source voltage to tune the operating point of the FeFET for reconfigurability, this brief presents an alternative approach based on the unique ferroelectric minor-loop behavior (which results from the partial switching of domains). Through simulation, we show that the NAND/ NOR reconfigurability can theoretically be achieved by adequately modulating the reference and writing pulses for the FeFET nonvolatile memory (NVM). Our approach may serve as an option when the body-effect capability is lacking for nonplanar FeFETs or 3-D stacked FeFETs which can be crucial to future high-density integration.
|Number of pages||3|
|Journal||IEEE Transactions on Electron Devices|
|State||Published - 1 Jan 2022|
- Ferroelectric FET (FeFET)
- Nonvolatile memory (NVM)