An accurate RF CMOS gate resistance model compatible with HSPICE

H. W. Lin; Steve S. Chung; S. C. Wong; G. W. Huang

doi:10.1109/ICMTS.2004.1309484

An accurate RF CMOS gate resistance model compatible with HSPICE

H. W. Lin^*, Steve S. Chung, S. C. Wong, G. W. Huang

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

6 Scopus citations

Abstract

Two important models, which are crucial to the RF CMOS, are the gate resistance and substrate resistance. Both are closely related to the development of accurate device and/or circuit models, such as noise. From the experimental observations, we found that the gate resistance depends largely on the bias and temperature. It will greatly impact the device performance at high frequency. For the first time, a simple and analytical physical-based gate resistance model is developed in this paper and has been implemented in Spice. The gate resistance is modeled by a parallel interconnection of the intrinsic gate resistance and a resistance coupled from the channel. The Spice simulation result of this model is more accurate than that of using a constant R _g model. A constant R_g model will overestimate the value of Y₁₁. While, in contrast, the proposed nonlinear gate resistance model with both bias and frequency dependent feature can achieve very good accuracy.

Original language	English
Pages	227-230
Number of pages	4
DOIs	https://doi.org/10.1109/ICMTS.2004.1309484
State	Published - Mar 2004
Event	Proceedings of the 2004 International Conference on Microelectronic Test Structures (ICMTS 2004) - Awaji, Japan Duration: 22 Mar 2004 → 25 Mar 2004

Conference

Conference	Proceedings of the 2004 International Conference on Microelectronic Test Structures (ICMTS 2004)
Country/Territory	Japan
City	Awaji
Period	22/03/04 → 25/03/04

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10.1109/ICMTS.2004.1309484

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title = "An accurate RF CMOS gate resistance model compatible with HSPICE",

abstract = "Two important models, which are crucial to the RF CMOS, are the gate resistance and substrate resistance. Both are closely related to the development of accurate device and/or circuit models, such as noise. From the experimental observations, we found that the gate resistance depends largely on the bias and temperature. It will greatly impact the device performance at high frequency. For the first time, a simple and analytical physical-based gate resistance model is developed in this paper and has been implemented in Spice. The gate resistance is modeled by a parallel interconnection of the intrinsic gate resistance and a resistance coupled from the channel. The Spice simulation result of this model is more accurate than that of using a constant R g model. A constant Rg model will overestimate the value of Y11. While, in contrast, the proposed nonlinear gate resistance model with both bias and frequency dependent feature can achieve very good accuracy.",

author = "Lin, {H. W.} and Chung, {Steve S.} and Wong, {S. C.} and Huang, {G. W.}",

year = "2004",

month = mar,

doi = "10.1109/ICMTS.2004.1309484",

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note = "Proceedings of the 2004 International Conference on Microelectronic Test Structures (ICMTS 2004) ; Conference date: 22-03-2004 Through 25-03-2004",

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AU - Lin, H. W.

AU - Chung, Steve S.

AU - Wong, S. C.

AU - Huang, G. W.

PY - 2004/3

Y1 - 2004/3

N2 - Two important models, which are crucial to the RF CMOS, are the gate resistance and substrate resistance. Both are closely related to the development of accurate device and/or circuit models, such as noise. From the experimental observations, we found that the gate resistance depends largely on the bias and temperature. It will greatly impact the device performance at high frequency. For the first time, a simple and analytical physical-based gate resistance model is developed in this paper and has been implemented in Spice. The gate resistance is modeled by a parallel interconnection of the intrinsic gate resistance and a resistance coupled from the channel. The Spice simulation result of this model is more accurate than that of using a constant R g model. A constant Rg model will overestimate the value of Y11. While, in contrast, the proposed nonlinear gate resistance model with both bias and frequency dependent feature can achieve very good accuracy.

AB - Two important models, which are crucial to the RF CMOS, are the gate resistance and substrate resistance. Both are closely related to the development of accurate device and/or circuit models, such as noise. From the experimental observations, we found that the gate resistance depends largely on the bias and temperature. It will greatly impact the device performance at high frequency. For the first time, a simple and analytical physical-based gate resistance model is developed in this paper and has been implemented in Spice. The gate resistance is modeled by a parallel interconnection of the intrinsic gate resistance and a resistance coupled from the channel. The Spice simulation result of this model is more accurate than that of using a constant R g model. A constant Rg model will overestimate the value of Y11. While, in contrast, the proposed nonlinear gate resistance model with both bias and frequency dependent feature can achieve very good accuracy.

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T2 - Proceedings of the 2004 International Conference on Microelectronic Test Structures (ICMTS 2004)

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An accurate RF CMOS gate resistance model compatible with HSPICE

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