An accurate model of thin film SOI-MOSFET breakdown voltage

Jim Chen, Faribon Assaderaghi, Hsing Jen Wann, Ping Ko, Chen-Ming Hu, Peng Cheng, Ray Solomon, Tung Yi Chan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

20 Scopus citations


A quantitative model which relates the SOI (silicon-on-insulator) MOSFET breakdown voltage to key parameters such as channel length, SOI film thickness, and gate voltage is presented. The SOI breakdown is caused by electron impact ionization current produced near the drain which is subsequently amplified by a parasitic lateral bipolar transition. This model is based on analytic modeling, quasi-2-D simulation and experimental study of the maximum drain electric field in SOI, and a novel method for measuring the lateral BJT (bipolar junction transistor) current gain beta using GIDL (gate-induced drain leakage) current. It can accurately model the breakdown voltage within 0.2 V for different channel lengths, gate voltages, and SOI film thicknesses.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780302435
StatePublished - 1 Jan 1991
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 8 Dec 199111 Dec 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


ConferenceInternational Electron Devices Meeting, IEDM 1991
Country/TerritoryUnited States


  • Analytical models
  • Breakdown voltage
  • Current measurement
  • Electric breakdown
  • Electrons
  • Impact ionization
  • MOSFET circuits
  • Semiconductor films
  • Silicon on insulator technology
  • Transistors


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