An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's

Steve S. Chung; S. J. Chen; C. M. Yih; W. J. Yang; Tien-Sheng Chao

doi:10.1109/RELPHY.1999.761621

An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's

Steve S. Chung^*, S. J. Chen, C. M. Yih, W. J. Yang, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, an accurate criterion has been proposed for reliability evaluation of state-of-the-art deep-submicron S/D extension n-MOSFET's. A new monitor for HC reliability evaluation has been developed using total values of N_it in the effective channel length region, instead of commonly used substrate current(I_B), impact ionization rate (I_D/I_B), or peak/average N_it values. An accurate degradation model has thus been developed based on the N_it distribution and mobility scattering effect. Moreover, this approach has been successfully used to demonstrate the feasibility for gate-engineering studies.

Original language	English
Title of host publication	Annual Proceedings - Reliability Physics (Symposium)
Publisher	IEEE
Pages	249-252
Number of pages	4
ISBN (Print)	0780352203
DOIs	https://doi.org/10.1109/RELPHY.1999.761621
State	Published - 1 Jan 1999
Event	Proceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium - San Diego, CA, USA Duration: 23 Mar 1999 → 25 Mar 1999

Publication series

Name	Annual Proceedings - Reliability Physics (Symposium)
ISSN (Print)	0099-9512

Conference

Conference	Proceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium
City	San Diego, CA, USA
Period	23/03/99 → 25/03/99

Access to Document

10.1109/RELPHY.1999.761621

Cite this

@inproceedings{6091961594fb4b2e856d437800d8d2fb,

title = "An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's",

abstract = "In this paper, an accurate criterion has been proposed for reliability evaluation of state-of-the-art deep-submicron S/D extension n-MOSFET's. A new monitor for HC reliability evaluation has been developed using total values of Nit in the effective channel length region, instead of commonly used substrate current(IB), impact ionization rate (ID/IB), or peak/average Nit values. An accurate degradation model has thus been developed based on the Nit distribution and mobility scattering effect. Moreover, this approach has been successfully used to demonstrate the feasibility for gate-engineering studies.",

author = "Chung, {Steve S.} and Chen, {S. J.} and Yih, {C. M.} and Yang, {W. J.} and Tien-Sheng Chao",

year = "1999",

month = jan,

day = "1",

doi = "10.1109/RELPHY.1999.761621",

language = "English",

isbn = "0780352203",

series = "Annual Proceedings - Reliability Physics (Symposium)",

publisher = "IEEE",

pages = "249--252",

booktitle = "Annual Proceedings - Reliability Physics (Symposium)",

note = "null ; Conference date: 23-03-1999 Through 25-03-1999",

}

Chung, SS, Chen, SJ, Yih, CM, Yang, WJ & Chao, T-S 1999, An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's. in Annual Proceedings - Reliability Physics (Symposium). Annual Proceedings - Reliability Physics (Symposium), IEEE, pp. 249-252, Proceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium, San Diego, CA, USA, 23/03/99. https://doi.org/10.1109/RELPHY.1999.761621

An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's. / Chung, Steve S.; Chen, S. J.; Yih, C. M. et al.

Annual Proceedings - Reliability Physics (Symposium). IEEE, 1999. p. 249-252 (Annual Proceedings - Reliability Physics (Symposium)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's

AU - Chung, Steve S.

AU - Chen, S. J.

AU - Yih, C. M.

AU - Yang, W. J.

AU - Chao, Tien-Sheng

PY - 1999/1/1

Y1 - 1999/1/1

N2 - In this paper, an accurate criterion has been proposed for reliability evaluation of state-of-the-art deep-submicron S/D extension n-MOSFET's. A new monitor for HC reliability evaluation has been developed using total values of Nit in the effective channel length region, instead of commonly used substrate current(IB), impact ionization rate (ID/IB), or peak/average Nit values. An accurate degradation model has thus been developed based on the Nit distribution and mobility scattering effect. Moreover, this approach has been successfully used to demonstrate the feasibility for gate-engineering studies.

AB - In this paper, an accurate criterion has been proposed for reliability evaluation of state-of-the-art deep-submicron S/D extension n-MOSFET's. A new monitor for HC reliability evaluation has been developed using total values of Nit in the effective channel length region, instead of commonly used substrate current(IB), impact ionization rate (ID/IB), or peak/average Nit values. An accurate degradation model has thus been developed based on the Nit distribution and mobility scattering effect. Moreover, this approach has been successfully used to demonstrate the feasibility for gate-engineering studies.

UR - http://www.scopus.com/inward/record.url?scp=0032682913&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.1999.761621

DO - 10.1109/RELPHY.1999.761621

M3 - Conference contribution

AN - SCOPUS:0032682913

SN - 0780352203

T3 - Annual Proceedings - Reliability Physics (Symposium)

SP - 249

EP - 252

BT - Annual Proceedings - Reliability Physics (Symposium)

PB - IEEE

Y2 - 23 March 1999 through 25 March 1999

ER -

An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this