TY - GEN
T1 - An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's
AU - Chung, Steve S.
AU - Chen, S. J.
AU - Yih, C. M.
AU - Yang, W. J.
AU - Chao, Tien-Sheng
PY - 1999
Y1 - 1999
N2 - In this paper, an accurate criterion has been proposed for reliability evaluation of state-of-the-art deep-submicron S/D extension n-MOSFET's. A new monitor for HC reliability evaluation has been developed using total values of Nit in the effective channel length region, instead of commonly used substrate current(IB), impact ionization rate (ID/IB), or peak/average Nit values. An accurate degradation model has thus been developed based on the Nit distribution and mobility scattering effect. Moreover, this approach has been successfully used to demonstrate the feasibility for gate-engineering studies.
AB - In this paper, an accurate criterion has been proposed for reliability evaluation of state-of-the-art deep-submicron S/D extension n-MOSFET's. A new monitor for HC reliability evaluation has been developed using total values of Nit in the effective channel length region, instead of commonly used substrate current(IB), impact ionization rate (ID/IB), or peak/average Nit values. An accurate degradation model has thus been developed based on the Nit distribution and mobility scattering effect. Moreover, this approach has been successfully used to demonstrate the feasibility for gate-engineering studies.
UR - http://www.scopus.com/inward/record.url?scp=0032682913&partnerID=8YFLogxK
U2 - 10.1109/RELPHY.1999.761621
DO - 10.1109/RELPHY.1999.761621
M3 - Conference contribution
AN - SCOPUS:0032682913
SN - 0780352203
T3 - Annual Proceedings - Reliability Physics (Symposium)
SP - 249
EP - 252
BT - Annual Proceedings - Reliability Physics (Symposium)
PB - IEEE
T2 - Proceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium
Y2 - 23 March 1999 through 25 March 1999
ER -