An 1.25Gbit/s -29dBm burst-mode optical receiver realized with 0.35um SiGe BiCMOS process using a PIN photodiode

Chun Chi Chen; Chia-Ming Tsai; Li Ren Huang

An 1.25Gbit/s -29dBm burst-mode optical receiver realized with 0.35um SiGe BiCMOS process using a PIN photodiode

Chun Chi Chen^*, Chia-Ming Tsai, Li Ren Huang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

An 1.25Gbps high sensitivity burst-mode optical receiver is realized using TSMC 0.35um SiGe BiCMOS process. This burst-mode receiver uses PIN photodiode instead of expensive avalanche photodiode to achieve the sensitivity requirement of an OLT receiver in a PON system. With a 0.7pF PIN photodiode, the measured optical sensitivity for 1310nm light achieves -29dBm at 1.25Gbps under BER of 10^-12. For burst-mode operation, the receiver provides fully differential output within 50ns after the start of an optical burst.

Original language	English
Pages	313-316
Number of pages	4
State	Published - 2004
Event	2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan Duration: 6 Dec 2004 → 9 Dec 2004

Conference

Conference	2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology
Country/Territory	Taiwan
City	Tainan
Period	6/12/04 → 9/12/04

Cite this

@conference{21156db6cd074158bb09f53cb0df7809,

title = "An 1.25Gbit/s -29dBm burst-mode optical receiver realized with 0.35um SiGe BiCMOS process using a PIN photodiode",

abstract = "An 1.25Gbps high sensitivity burst-mode optical receiver is realized using TSMC 0.35um SiGe BiCMOS process. This burst-mode receiver uses PIN photodiode instead of expensive avalanche photodiode to achieve the sensitivity requirement of an OLT receiver in a PON system. With a 0.7pF PIN photodiode, the measured optical sensitivity for 1310nm light achieves -29dBm at 1.25Gbps under BER of 10-12. For burst-mode operation, the receiver provides fully differential output within 50ns after the start of an optical burst.",

author = "Chen, {Chun Chi} and Chia-Ming Tsai and Huang, {Li Ren}",

year = "2004",

language = "English",

pages = "313--316",

note = "2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology ; Conference date: 06-12-2004 Through 09-12-2004",

}

An 1.25Gbit/s -29dBm burst-mode optical receiver realized with 0.35um SiGe BiCMOS process using a PIN photodiode. / Chen, Chun Chi; Tsai, Chia-Ming; Huang, Li Ren.
2004. 313-316 Paper presented at 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology, Tainan, Taiwan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - An 1.25Gbit/s -29dBm burst-mode optical receiver realized with 0.35um SiGe BiCMOS process using a PIN photodiode

AU - Chen, Chun Chi

AU - Tsai, Chia-Ming

AU - Huang, Li Ren

PY - 2004

Y1 - 2004

N2 - An 1.25Gbps high sensitivity burst-mode optical receiver is realized using TSMC 0.35um SiGe BiCMOS process. This burst-mode receiver uses PIN photodiode instead of expensive avalanche photodiode to achieve the sensitivity requirement of an OLT receiver in a PON system. With a 0.7pF PIN photodiode, the measured optical sensitivity for 1310nm light achieves -29dBm at 1.25Gbps under BER of 10-12. For burst-mode operation, the receiver provides fully differential output within 50ns after the start of an optical burst.

AB - An 1.25Gbps high sensitivity burst-mode optical receiver is realized using TSMC 0.35um SiGe BiCMOS process. This burst-mode receiver uses PIN photodiode instead of expensive avalanche photodiode to achieve the sensitivity requirement of an OLT receiver in a PON system. With a 0.7pF PIN photodiode, the measured optical sensitivity for 1310nm light achieves -29dBm at 1.25Gbps under BER of 10-12. For burst-mode operation, the receiver provides fully differential output within 50ns after the start of an optical burst.

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M3 - Paper

AN - SCOPUS:13444271924

SP - 313

EP - 316

T2 - 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology

Y2 - 6 December 2004 through 9 December 2004

ER -

An 1.25Gbit/s -29dBm burst-mode optical receiver realized with 0.35um SiGe BiCMOS process using a PIN photodiode

Abstract

Conference

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