TY - GEN
T1 - Amorphous silicon thin-film transistor gate driver circuit design optimization using a simulation-based evolutionary technique
AU - Chiu, Ying Ju
AU - Lee, Kuo Fu
AU - Chen, Ying Chieh
AU - Cheng, Hui Wen
AU - Li, Yiming
AU - Chiang, Tony
AU - Huang, Kuen Yu
AU - Hsieh, Tsau Hua
PY - 2010
Y1 - 2010
N2 - In this work, we for the first time optimize dynamic characteristic of amorphous silicon thin-film transistor (TFT) gate (ASG) driver circuits for TFT-LCD panel. The rise time, fall time, power dissipation, and ripple voltage of the ASG driver circuit are optimized using simulation-based evolutionary method which integrates genetic algorithm and circuit simulation on the unified optimization framework [1]. Two different a-Si:H TFT ASG driver circuits are optimized, the first circuit consisting of 14 a-Si:H TFT devices is designed for the specification of the rise time < 1.5 μs, the fall time < 1.5 μs and the ripple voltage < 3 V with the minimization of total layout area. The second one with 8 a-Si:H TFTs is further optimized with the power dissipation < 2 mW. The results of this study successfully met the desired specification; consequently, it benefits manufacturing of TFT-LCD panel.
AB - In this work, we for the first time optimize dynamic characteristic of amorphous silicon thin-film transistor (TFT) gate (ASG) driver circuits for TFT-LCD panel. The rise time, fall time, power dissipation, and ripple voltage of the ASG driver circuit are optimized using simulation-based evolutionary method which integrates genetic algorithm and circuit simulation on the unified optimization framework [1]. Two different a-Si:H TFT ASG driver circuits are optimized, the first circuit consisting of 14 a-Si:H TFT devices is designed for the specification of the rise time < 1.5 μs, the fall time < 1.5 μs and the ripple voltage < 3 V with the minimization of total layout area. The second one with 8 a-Si:H TFTs is further optimized with the power dissipation < 2 mW. The results of this study successfully met the desired specification; consequently, it benefits manufacturing of TFT-LCD panel.
UR - http://www.scopus.com/inward/record.url?scp=77957566190&partnerID=8YFLogxK
U2 - 10.1109/SMELEC.2010.5549386
DO - 10.1109/SMELEC.2010.5549386
M3 - Conference contribution
AN - SCOPUS:77957566190
SN - 9781424466092
T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
SP - 123
EP - 126
BT - ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics
T2 - 2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010
Y2 - 28 June 2010 through 30 June 2010
ER -