Amorphous indium Gallium Zinc oxide thin film transistors with different source/drain electrodes

Gao Ming Wu; Yi Shin Chu; Yi Teh Chou; Han Ping D. Shieh; Li Feng Teng; Po-Tsun Liu; Chi Neng Mo; Mei Tsao Chiang; Huai An Li

Amorphous indium Gallium Zinc oxide thin film transistors with different source/drain electrodes

Gao Ming Wu, Yi Shin Chu^*, Yi Teh Chou, Han Ping D. Shieh, Li Feng Teng, Po-Tsun Liu, Chi Neng Mo, Mei Tsao Chiang, Huai An Li

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, amorphous Indium Gallium Zinc Oxide Thin Film Transistors (a-IGZO TFTs) with four different kinds of source and drain electrode materials were investigated for comparison of electrical characteristics and the influence of interaction with environment without passivation layer of the a-IGZO thin film. The four kinds of materials are Al, Au, ITO and Ti. The electrical characteristics of each material were compared and analyzed in order to find an optimized electrical performance. The contact resistance of each metal was also extracted. As a result, Titanium has the lowest contact resistance. ITO is stable in the environment according to the small shift of threshold voltage.

Original language	English
State	Published - 2009
Event	2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, Taiwan Duration: 27 Apr 2009 → 30 Apr 2009

Conference

Conference	2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009
Country/Territory	Taiwan
City	Taipei
Period	27/04/09 → 30/04/09

Cite this

Wu, G. M., Chu, Y. S., Chou, Y. T., Shieh, H. P. D., Teng, L. F., Liu, P.-T., Mo, C. N., Chiang, M. T., & Li, H. A. (2009). Amorphous indium Gallium Zinc oxide thin film transistors with different source/drain electrodes. Paper presented at 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009, Taipei, Taiwan.

@conference{e068e3cd19ba40b4be3c5f1f6b1ce0f8,

title = "Amorphous indium Gallium Zinc oxide thin film transistors with different source/drain electrodes",

abstract = "In this paper, amorphous Indium Gallium Zinc Oxide Thin Film Transistors (a-IGZO TFTs) with four different kinds of source and drain electrode materials were investigated for comparison of electrical characteristics and the influence of interaction with environment without passivation layer of the a-IGZO thin film. The four kinds of materials are Al, Au, ITO and Ti. The electrical characteristics of each material were compared and analyzed in order to find an optimized electrical performance. The contact resistance of each metal was also extracted. As a result, Titanium has the lowest contact resistance. ITO is stable in the environment according to the small shift of threshold voltage.",

author = "Wu, {Gao Ming} and Chu, {Yi Shin} and Chou, {Yi Teh} and Shieh, {Han Ping D.} and Teng, {Li Feng} and Po-Tsun Liu and Mo, {Chi Neng} and Chiang, {Mei Tsao} and Li, {Huai An}",

year = "2009",

language = "English",

note = "2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 ; Conference date: 27-04-2009 Through 30-04-2009",

}

Wu, GM, Chu, YS, Chou, YT, Shieh, HPD, Teng, LF, Liu, P-T, Mo, CN, Chiang, MT & Li, HA 2009, 'Amorphous indium Gallium Zinc oxide thin film transistors with different source/drain electrodes', Paper presented at 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009, Taipei, Taiwan, 27/04/09 - 30/04/09.

Amorphous indium Gallium Zinc oxide thin film transistors with different source/drain electrodes. / Wu, Gao Ming; Chu, Yi Shin; Chou, Yi Teh et al.
2009. Paper presented at 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009, Taipei, Taiwan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Amorphous indium Gallium Zinc oxide thin film transistors with different source/drain electrodes

AU - Wu, Gao Ming

AU - Chu, Yi Shin

AU - Chou, Yi Teh

AU - Shieh, Han Ping D.

AU - Teng, Li Feng

AU - Liu, Po-Tsun

AU - Mo, Chi Neng

AU - Chiang, Mei Tsao

AU - Li, Huai An

PY - 2009

Y1 - 2009

N2 - In this paper, amorphous Indium Gallium Zinc Oxide Thin Film Transistors (a-IGZO TFTs) with four different kinds of source and drain electrode materials were investigated for comparison of electrical characteristics and the influence of interaction with environment without passivation layer of the a-IGZO thin film. The four kinds of materials are Al, Au, ITO and Ti. The electrical characteristics of each material were compared and analyzed in order to find an optimized electrical performance. The contact resistance of each metal was also extracted. As a result, Titanium has the lowest contact resistance. ITO is stable in the environment according to the small shift of threshold voltage.

AB - In this paper, amorphous Indium Gallium Zinc Oxide Thin Film Transistors (a-IGZO TFTs) with four different kinds of source and drain electrode materials were investigated for comparison of electrical characteristics and the influence of interaction with environment without passivation layer of the a-IGZO thin film. The four kinds of materials are Al, Au, ITO and Ti. The electrical characteristics of each material were compared and analyzed in order to find an optimized electrical performance. The contact resistance of each metal was also extracted. As a result, Titanium has the lowest contact resistance. ITO is stable in the environment according to the small shift of threshold voltage.

UR - http://www.scopus.com/inward/record.url?scp=79952062571&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79952062571

T2 - 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009

Y2 - 27 April 2009 through 30 April 2009

ER -

Amorphous indium Gallium Zinc oxide thin film transistors with different source/drain electrodes

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