Amorphous indium Gallium Zinc oxide thin film transistors with different source/drain electrodes

Gao Ming Wu, Yi Shin Chu*, Yi Teh Chou, Han Ping D. Shieh, Li Feng Teng, Po-Tsun Liu, Chi Neng Mo, Mei Tsao Chiang, Huai An Li

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

In this paper, amorphous Indium Gallium Zinc Oxide Thin Film Transistors (a-IGZO TFTs) with four different kinds of source and drain electrode materials were investigated for comparison of electrical characteristics and the influence of interaction with environment without passivation layer of the a-IGZO thin film. The four kinds of materials are Al, Au, ITO and Ti. The electrical characteristics of each material were compared and analyzed in order to find an optimized electrical performance. The contact resistance of each metal was also extracted. As a result, Titanium has the lowest contact resistance. ITO is stable in the environment according to the small shift of threshold voltage.

Original languageEnglish
StatePublished - 1 Dec 2009
Event2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, Taiwan
Duration: 27 Apr 200930 Apr 2009

Conference

Conference2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009
Country/TerritoryTaiwan
CityTaipei
Period27/04/0930/04/09

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