Ambipolar Schottky-barrier TFTs

Horng-Chih Lin*, Kuan Lin Yeh, Tiao Yuan Huang, Ruo Gu Huang, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


A novel Schottky-barrier metal-oxide-semiconductor thin-film transistor (SBTFT) was successfully demonstrated and characterized. The new SBTFT device features a field-induced-drain (FID) region, which is controlled by a metal field-plate lying on top of the passivation oxide. The FID region is sandwiched between the silicided drain and the active channel region. Carrier types and the conductivity of the transistor are controlled by the metal field-plate. The device is thus capable of ambipolar operation. Excellent ambipolar performance with on/off current ratios over 10 6 for both p- and n-channel operations was realized simultaneously on the same device fabricated with polysilicon active layer. Moreover, the off-state leakage current shows very weak dependence on the gate-to-drain voltage difference with the FID structure. Finally, the effects of FID length are explored.

Original languageEnglish
Pages (from-to)264-270
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number2
StatePublished - 1 Feb 2002


  • Ambipolar
  • Field-induced drain
  • Schottky barrier
  • TFT


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