Ambient stability enhancement of thin-film transistor with InGaZnO capped with InGaZnO: N bilayer stack channel layers

Po-Tsun Liu; Yi Teh Chou; Li Feng Teng; Fu Hai Li; Chur Shyang Fuh; Han Ping D. Shieh

doi:10.1109/LED.2011.2163181

Ambient stability enhancement of thin-film transistor with InGaZnO capped with InGaZnO: N bilayer stack channel layers

Po-Tsun Liu^*, Yi Teh Chou, Li Feng Teng, Fu Hai Li, Chur Shyang Fuh, Han Ping D. Shieh

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

A thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO:N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.

Original language	English
Article number	5995139
Pages (from-to)	1397-1399
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	10
DOIs	https://doi.org/10.1109/LED.2011.2163181
State	Published - 1 Oct 2011

Keywords

in situ back-channel passivation (BCP)
InGaZnO (IGZO)
nitrogenated InGaZnO (IGZO:N)

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10.1109/LED.2011.2163181

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title = "Ambient stability enhancement of thin-film transistor with InGaZnO capped with InGaZnO: N bilayer stack channel layers",

abstract = "A thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO:N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.",

keywords = "in situ back-channel passivation (BCP), InGaZnO (IGZO), nitrogenated InGaZnO (IGZO:N)",

author = "Po-Tsun Liu and Chou, {Yi Teh} and Teng, {Li Feng} and Li, {Fu Hai} and Fuh, {Chur Shyang} and Shieh, {Han Ping D.}",

year = "2011",

month = oct,

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doi = "10.1109/LED.2011.2163181",

language = "English",

volume = "32",

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T2 - N bilayer stack channel layers

AU - Liu, Po-Tsun

AU - Chou, Yi Teh

AU - Teng, Li Feng

AU - Li, Fu Hai

AU - Fuh, Chur Shyang

AU - Shieh, Han Ping D.

PY - 2011/10/1

Y1 - 2011/10/1

N2 - A thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO:N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.

AB - A thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO:N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.

KW - in situ back-channel passivation (BCP)

KW - InGaZnO (IGZO)

KW - nitrogenated InGaZnO (IGZO:N)

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

M1 - 5995139

ER -

Ambient stability enhancement of thin-film transistor with InGaZnO capped with InGaZnO: N bilayer stack channel layers

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Keywords

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