AlN Passivation Technique for Ultra-Thin Barrier GaN Power Devices Demonstrating High Output Current and Low Current Degradation

Keyphrases

• GaN Power Device 100%
• Passivation Effect 100%
• Current Degradation 100%
• High Output Current 100%
• Low Current 100%
• AlN Passivation 100%
• Ultra-thin Barrier 100%
• Metal-organic Chemical Vapor Deposition (MOCVD) 50%
• Ultrathin 50%
• Drain Current 50%
• Device Characteristics 50%
• High Electron Mobility Transistor 50%
• On-state Resistance 50%
• Power Device 50%
• Device Application 50%
• AlGaN Barrier 50%
• Passivated 50%
• Barrier Structure 50%
• Metal-insulator-semiconductor 50%
• Barrier Element 50%

Engineering

• Passivation 100%
• Current Output 100%
• Power Device 100%
• Current Drain 50%

Material Science

• Aluminum Nitride 100%
• Power Device 100%
• Transistor 50%
• Electron Mobility 50%