AlN Passivation Technique for Ultra-Thin Barrier GaN Power Devices Demonstrating High Output Current and Low Current Degradation

Chen Hsi Tsai, Jui Sheng Wu, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

For the first time, we introduce an effective passivation technique for ultra-thin AlGaN barrier metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs). Three different ultra-thin barrier structures were carried out to be compared for the device characteristics. The MOCVD-ALN passivated device demonstrated a high maximum drain current of 1002 mA/mm, low on-state resistance of 7.2 Ω.mm, and low current degradation, showing great potential for future power device applications.

Original languageEnglish
Title of host publicationProceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665491389
DOIs
StatePublished - 2022
Event2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022 - Changhua, Taiwan
Duration: 14 Oct 202216 Oct 2022

Publication series

NameProceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022

Conference

Conference2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022
Country/TerritoryTaiwan
CityChanghua
Period14/10/2216/10/22

Keywords

  • AlGaN
  • HEMT
  • passivation
  • thin barrier

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