@inproceedings{ab3c8a0bf7ce4838b4e2fac4507371df,
title = "AlN Passivation Technique for Ultra-Thin Barrier GaN Power Devices Demonstrating High Output Current and Low Current Degradation",
abstract = "For the first time, we introduce an effective passivation technique for ultra-thin AlGaN barrier metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs). Three different ultra-thin barrier structures were carried out to be compared for the device characteristics. The MOCVD-ALN passivated device demonstrated a high maximum drain current of 1002 mA/mm, low on-state resistance of 7.2 Ω.mm, and low current degradation, showing great potential for future power device applications.",
keywords = "AlGaN, HEMT, passivation, thin barrier",
author = "Tsai, {Chen Hsi} and Wu, {Jui Sheng} and Chang, {Edward Yi}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022 ; Conference date: 14-10-2022 Through 16-10-2022",
year = "2022",
doi = "10.1109/IET-ICETA56553.2022.9971535",
language = "English",
series = "Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022",
address = "美國",
}