All Nonmetal Resistive Random Access Memory

Te Jui Yen; Andrei Gismatulin; Vladimir Volodin; Vladimir Gritsenko; Albert Chin

doi:10.1038/s41598-019-42706-9

All Nonmetal Resistive Random Access Memory

Te Jui Yen, Andrei Gismatulin, Vladimir Volodin, Vladimir Gritsenko, Albert Chin^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N ⁺ -Si/SiO _x /P ⁺ -Si combination forms a N ⁺ IP ⁺ diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 × 10 ⁴ was measured at room temperature. A favorable retention memory window of 1.2 × 10 ³ was attained for 10 ⁴ s at 85 °C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiO _x was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions.

Original language	English
Article number	6144
Journal	Scientific reports
Volume	9
Issue number	1
DOIs	https://doi.org/10.1038/s41598-019-42706-9
State	Published - 1 Dec 2019

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title = "All Nonmetal Resistive Random Access Memory",

abstract = " Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N + -Si/SiO x /P + -Si combination forms a N + IP + diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 × 10 4 was measured at room temperature. A favorable retention memory window of 1.2 × 10 3 was attained for 10 4 s at 85 °C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiO x was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions.",

author = "Yen, {Te Jui} and Andrei Gismatulin and Vladimir Volodin and Vladimir Gritsenko and Albert Chin",

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doi = "10.1038/s41598-019-42706-9",

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T1 - All Nonmetal Resistive Random Access Memory

AU - Yen, Te Jui

AU - Gismatulin, Andrei

AU - Volodin, Vladimir

AU - Gritsenko, Vladimir

AU - Chin, Albert

PY - 2019/12/1

Y1 - 2019/12/1

N2 - Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N + -Si/SiO x /P + -Si combination forms a N + IP + diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 × 10 4 was measured at room temperature. A favorable retention memory window of 1.2 × 10 3 was attained for 10 4 s at 85 °C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiO x was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions.

AB - Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N + -Si/SiO x /P + -Si combination forms a N + IP + diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 × 10 4 was measured at room temperature. A favorable retention memory window of 1.2 × 10 3 was attained for 10 4 s at 85 °C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiO x was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions.

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JF - Scientific reports

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All Nonmetal Resistive Random Access Memory

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