All GaN-on-Si high power module design and performance evaluation

Keyphrases

• Design Evaluation 100%
• Performance Evaluation 100%
• GaN-on-Si 100%
• GaN HEMT 100%
• Parallel Connection 100%
• Module Performance 100%
• GaN Power Device 100%
• Power Module Design 100%
• High Power Module 100%
• Current-voltage 50%
• Leakage Current 50%
• Drain Current 50%
• Threshold Voltage 50%
• AlGaN-GaN 50%
• AlN Substrate 50%
• Multiple chips 50%
• Current Capacity 50%
• High Current 50%
• Power Module Packaging 50%
• Power Density 50%
• DC Current 50%
• Pulse Length 50%
• Duty Factor 50%
• Dynamic Switching 50%
• Three-parallel 50%
• Pulse Current 50%
• Voltage-current 50%
• GaN chip 50%
• Power Rating 50%
• High Electron Mobility Transistor 50%
• Length Factor 50%
• Static Parameters 50%
• Current Sharing 50%
• Package Parasitic 50%

Engineering

• Experimental Result 100%
• Current Drain 100%
• Dynamic Switching 100%
• Power Rating 100%
• Parallel Connection 100%
• Pulse Length 100%
• Power Density 100%
• Module Design 100%

Material Science

• Transistor 100%
• Electron Mobility 100%
• Density 33%
• Aluminum Nitride 33%