All-color plasmonic nanolasers with ultralow thresholds

Yu Jung Lu; Jisun Kim; Hung Ying Chen; Wen-Hao Chang; Chih Kang Shih; Shangjr Gwo

doi:10.1109/CLEOPR.2013.6600140

All-color plasmonic nanolasers with ultralow thresholds

Yu Jung Lu, Jisun Kim, Hung Ying Chen, Wen-Hao Chang, Chih Kang Shih, Shangjr Gwo

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Diffraction-unlimited semiconductor nanolasers are demonstrated by using single shape-controlled InGaN/GaN core-shell nanorods as laser gain media on Ag films epitaxially grown on Si substrates. The use of atomically smooth Ag films allows us to fabricate low-loss plasmonic cavities for ultralow-threshold, continuous-wave (CW) nanolaser operation above liquid nitrogen temperature. Furthermore, the tunable band-gap energy of the In_xGa_1-xN alloy makes it possible to realize laser emission in the full visible spectrum.

Original language	English
Title of host publication	2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
Number of pages	1
DOIs	https://doi.org/10.1109/CLEOPR.2013.6600140
State	Published - Jun 2013
Event	10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 - Kyoto, Japan Duration: 30 Jun 2013 → 4 Jul 2013

Publication series

Name	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Conference

Conference	10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
Country/Territory	Japan
City	Kyoto
Period	30/06/13 → 4/07/13

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10.1109/CLEOPR.2013.6600140

Cite this

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title = "All-color plasmonic nanolasers with ultralow thresholds",

abstract = "Diffraction-unlimited semiconductor nanolasers are demonstrated by using single shape-controlled InGaN/GaN core-shell nanorods as laser gain media on Ag films epitaxially grown on Si substrates. The use of atomically smooth Ag films allows us to fabricate low-loss plasmonic cavities for ultralow-threshold, continuous-wave (CW) nanolaser operation above liquid nitrogen temperature. Furthermore, the tunable band-gap energy of the InxGa1-xN alloy makes it possible to realize laser emission in the full visible spectrum.",

author = "Lu, {Yu Jung} and Jisun Kim and Chen, {Hung Ying} and Wen-Hao Chang and Shih, {Chih Kang} and Shangjr Gwo",

year = "2013",

month = jun,

doi = "10.1109/CLEOPR.2013.6600140",

language = "English",

isbn = "9781467364751",

series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

booktitle = "2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013",

note = "10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 ; Conference date: 30-06-2013 Through 04-07-2013",

}

Lu, YJ, Kim, J, Chen, HY, Chang, W-H, Shih, CK & Gwo, S 2013, All-color plasmonic nanolasers with ultralow thresholds. in 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013., 6600140, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013, Kyoto, Japan, 30/06/13. https://doi.org/10.1109/CLEOPR.2013.6600140

All-color plasmonic nanolasers with ultralow thresholds. / Lu, Yu Jung; Kim, Jisun; Chen, Hung Ying et al.
2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013. 2013. 6600140 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - All-color plasmonic nanolasers with ultralow thresholds

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AU - Kim, Jisun

AU - Chen, Hung Ying

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AU - Shih, Chih Kang

AU - Gwo, Shangjr

PY - 2013/6

Y1 - 2013/6

N2 - Diffraction-unlimited semiconductor nanolasers are demonstrated by using single shape-controlled InGaN/GaN core-shell nanorods as laser gain media on Ag films epitaxially grown on Si substrates. The use of atomically smooth Ag films allows us to fabricate low-loss plasmonic cavities for ultralow-threshold, continuous-wave (CW) nanolaser operation above liquid nitrogen temperature. Furthermore, the tunable band-gap energy of the InxGa1-xN alloy makes it possible to realize laser emission in the full visible spectrum.

AB - Diffraction-unlimited semiconductor nanolasers are demonstrated by using single shape-controlled InGaN/GaN core-shell nanorods as laser gain media on Ag films epitaxially grown on Si substrates. The use of atomically smooth Ag films allows us to fabricate low-loss plasmonic cavities for ultralow-threshold, continuous-wave (CW) nanolaser operation above liquid nitrogen temperature. Furthermore, the tunable band-gap energy of the InxGa1-xN alloy makes it possible to realize laser emission in the full visible spectrum.

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U2 - 10.1109/CLEOPR.2013.6600140

DO - 10.1109/CLEOPR.2013.6600140

M3 - Conference contribution

AN - SCOPUS:84885445839

SN - 9781467364751

T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

BT - 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013

T2 - 10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013

Y2 - 30 June 2013 through 4 July 2013

ER -

All-color plasmonic nanolasers with ultralow thresholds

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