AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer

S. J. Chang; K. H. Lee; P. C. Chang; Y. C. Wang; Cheng-Huang Kuo; S. L. Wu

doi:10.1109/JSEN.2008.2011070

AlGaN/GaN Schottky barrier photodetector with multi-Mg_xN _y/GaN buffer

S. J. Chang, K. H. Lee, P. C. Chang, Y. C. Wang, Cheng-Huang Kuo, S. L. Wu

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-Mg_xN_y/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-Mg_xN_y/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

Original language	English
Article number	4749393
Pages (from-to)	87-92
Number of pages	6
Journal	IEEE Sensors Journal
Volume	9
Issue number	2
DOIs	https://doi.org/10.1109/JSEN.2008.2011070
State	Published - 1 Feb 2009

Keywords

AlGaN/GaN heterostructure
Multi-MgN /GaN buffer
Schottky barrier photodetector

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10.1109/JSEN.2008.2011070

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title = "AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer",

abstract = "AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.",

keywords = "AlGaN/GaN heterostructure, Multi-MgN /GaN buffer, Schottky barrier photodetector",

author = "Chang, {S. J.} and Lee, {K. H.} and Chang, {P. C.} and Wang, {Y. C.} and Cheng-Huang Kuo and Wu, {S. L.}",

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TY - JOUR

T1 - AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer

AU - Chang, S. J.

AU - Lee, K. H.

AU - Chang, P. C.

AU - Wang, Y. C.

AU - Kuo, Cheng-Huang

AU - Wu, S. L.

PY - 2009/2/1

Y1 - 2009/2/1

N2 - AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

AB - AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

KW - AlGaN/GaN heterostructure

KW - Multi-MgN /GaN buffer

KW - Schottky barrier photodetector

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U2 - 10.1109/JSEN.2008.2011070

DO - 10.1109/JSEN.2008.2011070

M3 - Article

AN - SCOPUS:68349154812

SN - 1530-437X

VL - 9

SP - 87

EP - 92

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 2

M1 - 4749393

ER -

AlGaN/GaN Schottky barrier photodetector with multi-Mg_xN _y/GaN buffer

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