AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer

S. J. Chang, K. H. Lee, P. C. Chang, Y. C. Wang, Cheng-Huang Kuo, S. L. Wu

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

Original languageEnglish
Article number4749393
Pages (from-to)87-92
Number of pages6
JournalIEEE Sensors Journal
Issue number2
StatePublished - 1 Feb 2009


  • AlGaN/GaN heterostructure
  • Multi-MgN /GaN buffer
  • Schottky barrier photodetector


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