TY - JOUR
T1 - AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes With Varied Thickness of Sidewall Passivation via Atomic Layer Deposition
AU - Peng, Kangwei
AU - Lai, Shouqiang
AU - Shen, Mengchun
AU - Li, Saijun
AU - Zheng, Lijie
AU - Dai, Yurong
AU - Chen, Jilan
AU - Zhu, Lihong
AU - Chen, Guolong
AU - Wang, Shuli
AU - Kuo, Hao Chun
AU - Lu, Yijun
AU - Chen, Zhong
AU - Wu, Tingzhu
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2023/11/1
Y1 - 2023/11/1
N2 - In this study, we fabricated deep-ultraviolet light-emitting diodes (DUV-LEDs) with Al2O3 films of 0-, 130-, and 255-nm via atomic layer deposition (ALD). In addition, the effects of the passivation layers on the DUV-LEDs were systematically investigated. The current-voltage characteristics of these samples revealed the passivating effect of the Al2O3 ALD films on the DUV-LEDs. By analyzing the external quantum efficiency (EQE) at room temperature using the ABC + f,(n) model, the differences in the physical mechanisms of the Al2O3 ALD film on DUV-LEDs were determined. The measurements of the electroluminescence (EL) and far-field radiation patterns (EQE, light output power (LOP), and radiation patterns) showed that ALD can enhance the performance of DUV-LEDs, particularly DUV-LEDs with a 130-nm Al2O3 ALD passivation layer. Moreover, the aging test and failure ratio of these DUV-LEDs under humidity exposure (85 °C/85% RH) indicated the specific effect of these Al2O3 ALD films on the reliability of DUV-LEDs.
AB - In this study, we fabricated deep-ultraviolet light-emitting diodes (DUV-LEDs) with Al2O3 films of 0-, 130-, and 255-nm via atomic layer deposition (ALD). In addition, the effects of the passivation layers on the DUV-LEDs were systematically investigated. The current-voltage characteristics of these samples revealed the passivating effect of the Al2O3 ALD films on the DUV-LEDs. By analyzing the external quantum efficiency (EQE) at room temperature using the ABC + f,(n) model, the differences in the physical mechanisms of the Al2O3 ALD film on DUV-LEDs were determined. The measurements of the electroluminescence (EL) and far-field radiation patterns (EQE, light output power (LOP), and radiation patterns) showed that ALD can enhance the performance of DUV-LEDs, particularly DUV-LEDs with a 130-nm Al2O3 ALD passivation layer. Moreover, the aging test and failure ratio of these DUV-LEDs under humidity exposure (85 °C/85% RH) indicated the specific effect of these Al2O3 ALD films on the reliability of DUV-LEDs.
KW - Atomic layer deposition (ALD)
KW - deep-ultraviolet light-emitting diodes (DUV-LEDs)
KW - sidewall passivation
UR - http://www.scopus.com/inward/record.url?scp=85174854786&partnerID=8YFLogxK
U2 - 10.1109/TED.2023.3316633
DO - 10.1109/TED.2023.3316633
M3 - Article
AN - SCOPUS:85174854786
SN - 0018-9383
VL - 70
SP - 5727
EP - 5731
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 11
ER -