AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

Ray-Hua Horng*, D. S. Wuu, S. C. Wei, M. F. Huang, K. H. Chang, P. H. Liu, K. C. Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


The fabrication of an AlGaInP/AuBe/glass light emitting diode (LED) by a wafer bonding technique is presented. It was grown by metalorganic vapor phase epitaxy on a temporary GaAs substrate. This wafer-bonded device has a luminance of 3050 cd/m2 at an operating current of 20 mA. With an absorbing GaAs substrate, it is about three times brighter than a conventional device.

Original languageEnglish
Pages (from-to)154-156
Number of pages3
JournalApplied Physics Letters
Issue number2
StatePublished - 12 Jul 1999


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