AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

Ray-Hua Horng; D. S. Wuu; S. C. Wei; M. F. Huang; K. H. Chang; P. H. Liu; K. C. Lin

doi:10.1063/1.124303

AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

Ray-Hua Horng^*, D. S. Wuu, S. C. Wei, M. F. Huang, K. H. Chang, P. H. Liu, K. C. Lin

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The fabrication of an AlGaInP/AuBe/glass light emitting diode (LED) by a wafer bonding technique is presented. It was grown by metalorganic vapor phase epitaxy on a temporary GaAs substrate. This wafer-bonded device has a luminance of 3050 cd/m² at an operating current of 20 mA. With an absorbing GaAs substrate, it is about three times brighter than a conventional device.

Original language	English
Pages (from-to)	154-156
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	2
DOIs	https://doi.org/10.1063/1.124303
State	Published - 12 Jul 1999

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@article{f2475f4581e846afae9fa58114f125c2,

title = "AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology",

abstract = "The fabrication of an AlGaInP/AuBe/glass light emitting diode (LED) by a wafer bonding technique is presented. It was grown by metalorganic vapor phase epitaxy on a temporary GaAs substrate. This wafer-bonded device has a luminance of 3050 cd/m2 at an operating current of 20 mA. With an absorbing GaAs substrate, it is about three times brighter than a conventional device.",

author = "Ray-Hua Horng and Wuu, {D. S.} and Wei, {S. C.} and Huang, {M. F.} and Chang, {K. H.} and Liu, {P. H.} and Lin, {K. C.}",

year = "1999",

month = jul,

day = "12",

doi = "10.1063/1.124303",

language = "English",

volume = "75",

pages = "154--156",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

AU - Horng, Ray-Hua

AU - Wuu, D. S.

AU - Wei, S. C.

AU - Huang, M. F.

AU - Chang, K. H.

AU - Liu, P. H.

AU - Lin, K. C.

PY - 1999/7/12

Y1 - 1999/7/12

N2 - The fabrication of an AlGaInP/AuBe/glass light emitting diode (LED) by a wafer bonding technique is presented. It was grown by metalorganic vapor phase epitaxy on a temporary GaAs substrate. This wafer-bonded device has a luminance of 3050 cd/m2 at an operating current of 20 mA. With an absorbing GaAs substrate, it is about three times brighter than a conventional device.

AB - The fabrication of an AlGaInP/AuBe/glass light emitting diode (LED) by a wafer bonding technique is presented. It was grown by metalorganic vapor phase epitaxy on a temporary GaAs substrate. This wafer-bonded device has a luminance of 3050 cd/m2 at an operating current of 20 mA. With an absorbing GaAs substrate, it is about three times brighter than a conventional device.

UR - http://www.scopus.com/inward/record.url?scp=0032622032&partnerID=8YFLogxK

U2 - 10.1063/1.124303

DO - 10.1063/1.124303

M3 - Article

AN - SCOPUS:0032622032

SN - 0003-6951

VL - 75

SP - 154

EP - 156

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

Abstract

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