AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser

S. C. Huang; H. L. Chang; Kuan-Wei Su; A. Li; S. C. Liu; Yung-Fu Chen; Kai-Feng Huang

doi:10.1007/s00340-008-3346-2

AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO₄ laser

S. C. Huang, H. L. Chang, Kuan-Wei Su, A. Li, S. C. Liu, Yung-Fu Chen, Kai-Feng Huang

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.

Original language	English
Pages (from-to)	483-487
Number of pages	5
Journal	Applied Physics B: Lasers and Optics
Volume	94
Issue number	3
DOIs	https://doi.org/10.1007/s00340-008-3346-2
State	Published - 1 Mar 2009

Access to Document

10.1007/s00340-008-3346-2

Cite this

@article{a729db5755fb4ab9ba8964b6a6258399,

title = "AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser",

abstract = "An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.",

author = "Huang, {S. C.} and Chang, {H. L.} and Kuan-Wei Su and A. Li and Liu, {S. C.} and Yung-Fu Chen and Kai-Feng Huang",

year = "2009",

month = mar,

day = "1",

doi = "10.1007/s00340-008-3346-2",

language = "English",

volume = "94",

pages = "483--487",

journal = "Applied Physics B: Lasers and Optics",

issn = "0946-2171",

publisher = "Springer Verlag",

number = "3",

}

TY - JOUR

T1 - AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser

AU - Huang, S. C.

AU - Chang, H. L.

AU - Su, Kuan-Wei

AU - Li, A.

AU - Liu, S. C.

AU - Chen, Yung-Fu

AU - Huang, Kai-Feng

PY - 2009/3/1

Y1 - 2009/3/1

N2 - An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.

AB - An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.

UR - http://www.scopus.com/inward/record.url?scp=59449110622&partnerID=8YFLogxK

U2 - 10.1007/s00340-008-3346-2

DO - 10.1007/s00340-008-3346-2

M3 - Article

AN - SCOPUS:59449110622

SN - 0946-2171

VL - 94

SP - 483

EP - 487

JO - Applied Physics B: Lasers and Optics

JF - Applied Physics B: Lasers and Optics

IS - 3

ER -

AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO₄ laser

Abstract

Access to Document

Other files and links

Fingerprint

Cite this