AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser

S. C. Huang, H. L. Chang, Kuan-Wei Su, A. Li, S. C. Liu, Yung-Fu Chen, Kai-Feng Huang

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.

Original languageEnglish
Pages (from-to)483-487
Number of pages5
JournalApplied Physics B: Lasers and Optics
Issue number3
StatePublished - 1 Mar 2009


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