AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laser

S. C. Huang, S. C. Liu, A. Li, Kuan-Wei Su, Yung-Fu Chen*, Kai-Feng Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

We demonstrate what is believed to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber in the Q switching of a high-power diode-pumped Nd-doped 1.06 μm laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave to avoid damage. With an incident pump power of 13.5 W, an average output power of 3.5 W with a Q-switched pulse width of 0.9 ns at a pulse repetition rate of 110 kHz was obtained.

Original languageEnglish
Pages (from-to)1480-1482
Number of pages3
JournalOptics Letters
Volume32
Issue number11
DOIs
StatePublished - 1 Jun 2007

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