AlGaInAs quantum-well 1.3-μm laser by a diode-pumped actively Q-switched Nd:GdVO4 laser

S. C. Huang, Kuan-Wei Su, A. Li, S. C. Liu, Yung-Fu Chen, K. F. Hunag

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report a high-peak-power AlGaInAs 1.36-μm vertical-external-cavity surface-emitting laser (VECSEL) optically pumped by a diode-pumped actively Q-switched Nd:GdVO41.06-μm laser under room-temperature operation. The gain medium is an AlGaInAs quantum wells (QWs)/barrier structure grown on a Fe-doped InP substrate by metalorganic chemical-vapor deposition. With an average pump power of 1.9 W, an average output power of 340 mW was obtained at a pulse repetition rate of 40 kHz, corresponding to an optical-to-optical conversion efficiency of 18.76%. With a peak pump power of 7.9 kW, the highest peak output power was 1.3 kW at a pulse repetition rate of 10 kHz.

Original languageEnglish
Title of host publicationSolid State Lasers XVII
Subtitle of host publicationTechnology and Devices
DOIs
StatePublished - 7 May 2008
EventSolid State Lasers XVII: Technology and Devices - San Jose, CA, United States
Duration: 20 Jan 200824 Jan 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6871
ISSN (Print)0277-786X

Conference

ConferenceSolid State Lasers XVII: Technology and Devices
Country/TerritoryUnited States
CitySan Jose, CA
Period20/01/0824/01/08

Keywords

  • AlGaInAs
  • High-peak power
  • VECSEL

Fingerprint

Dive into the research topics of 'AlGaInAs quantum-well 1.3-μm laser by a diode-pumped actively Q-switched Nd:GdVO4 laser'. Together they form a unique fingerprint.

Cite this