This paper describes a self-aligned heterojunction-bipolar-transistor (HBT) process based on a simple dual-lift-off method. Transistors with emitter width down to 1.2 μm and base doping up to 1 X 1020/cm3 have been fabricated. Extrapolated current gain cutoff frequency ftof 55 GHz and maximum frequency of oscillation fmax of 105 GHz have been obtained. Current-mode-logic (CML) ring oscillators with propagation delays as low as 14.2 ps have been demonstrated. These are record performance results for bipolar transistors. The dual-lift-off process is promising for both millimeter-wave devices and large-scale integrated circuit fabrication.