AlGaAs/GaAs Heterojunction Bipolar Transistors Fabricated Using a Self-Aligned Dual-Lift-Off Process

Mau-Chung Chang, Peter M. Asbeck, K. C. Wang, G. J. Sullivan, Neng Haung Sheng, John A. Higgins, D. L. Miller

    Research output: Contribution to journalArticlepeer-review

    79 Scopus citations

    Abstract

    This paper describes a self-aligned heterojunction-bipolar-transistor (HBT) process based on a simple dual-lift-off method. Transistors with emitter width down to 1.2 μm and base doping up to 1 X 1020/cm3 have been fabricated. Extrapolated current gain cutoff frequency ftof 55 GHz and maximum frequency of oscillation fmax of 105 GHz have been obtained. Current-mode-logic (CML) ring oscillators with propagation delays as low as 14.2 ps have been demonstrated. These are record performance results for bipolar transistors. The dual-lift-off process is promising for both millimeter-wave devices and large-scale integrated circuit fabrication.

    Original languageEnglish
    Pages (from-to)303-305
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume8
    Issue number7
    DOIs
    StatePublished - 1 Jan 1987

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