Al-SiO2-Y2O3-SiO2-poly-si thin-film transistor nonvolatile memory incorporating a Y2O 3 charge trapping layer

Tung Ming Pan; Li Chen Yen; Somnath Mondal; Chieh Ting Lo; Tien-Sheng Chao

doi:10.1149/2.002310ssl

Al-SiO₂-Y₂O₃-SiO₂-poly-si thin-film transistor nonvolatile memory incorporating a Y₂O ₃ charge trapping layer

Tung Ming Pan, Li Chen Yen, Somnath Mondal, Chieh Ting Lo, Tien-Sheng Chao

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this letter, we investigate the structural properties and electrical characteristics of the Al-SiO2-Y2O3-SiO2-poly-Si (AOYOP) thin-film transistor (TFT) nonvolatile memory device. The composition of Y2O3 charge-trapping layer was analyzed using X-ray photoelectron spectroscopy. The Y2O3 AOYOP TFT memory device exhibited a large memory window of 2.5 V, a long charge retention time of ten years with a minimal charge loss of ?15%, and a better endurance performance for P/E cycles up to 105.

Original language	English
Journal	ECS Solid State Letters
Volume	2
Issue number	10
DOIs	https://doi.org/10.1149/2.002310ssl
State	Published - 26 Jul 2013

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title = "Al-SiO2-Y2O3-SiO2-poly-si thin-film transistor nonvolatile memory incorporating a Y2O 3 charge trapping layer",

abstract = "In this letter, we investigate the structural properties and electrical characteristics of the Al-SiO2-Y2O3-SiO2-poly-Si (AOYOP) thin-film transistor (TFT) nonvolatile memory device. The composition of Y2O3 charge-trapping layer was analyzed using X-ray photoelectron spectroscopy. The Y2O3 AOYOP TFT memory device exhibited a large memory window of 2.5 V, a long charge retention time of ten years with a minimal charge loss of ?15%, and a better endurance performance for P/E cycles up to 105.",

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AU - Pan, Tung Ming

AU - Yen, Li Chen

AU - Mondal, Somnath

AU - Lo, Chieh Ting

AU - Chao, Tien-Sheng

PY - 2013/7/26

Y1 - 2013/7/26

N2 - In this letter, we investigate the structural properties and electrical characteristics of the Al-SiO2-Y2O3-SiO2-poly-Si (AOYOP) thin-film transistor (TFT) nonvolatile memory device. The composition of Y2O3 charge-trapping layer was analyzed using X-ray photoelectron spectroscopy. The Y2O3 AOYOP TFT memory device exhibited a large memory window of 2.5 V, a long charge retention time of ten years with a minimal charge loss of ?15%, and a better endurance performance for P/E cycles up to 105.

AB - In this letter, we investigate the structural properties and electrical characteristics of the Al-SiO2-Y2O3-SiO2-poly-Si (AOYOP) thin-film transistor (TFT) nonvolatile memory device. The composition of Y2O3 charge-trapping layer was analyzed using X-ray photoelectron spectroscopy. The Y2O3 AOYOP TFT memory device exhibited a large memory window of 2.5 V, a long charge retention time of ten years with a minimal charge loss of ?15%, and a better endurance performance for P/E cycles up to 105.

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Al-SiO₂-Y₂O₃-SiO₂-poly-si thin-film transistor nonvolatile memory incorporating a Y₂O ₃ charge trapping layer

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