AIGaAs/lnGaAs/GaAs Strained-Layer Heterojunction Bipolar Transistors by Molecular Beam Epitaxy

G. J. Sullivan; P. M. Asbeck; Mau-Chung Chang; D. L. Miller; K. C. Wang

doi:10.1049/el:19860286

AIGaAs/lnGaAs/GaAs Strained-Layer Heterojunction Bipolar Transistors by Molecular Beam Epitaxy

G. J. Sullivan, P. M. Asbeck, Mau-Chung Chang, D. L. Miller, K. C. Wang

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Abstract

The growth and characteristics of the first AlGaAs/InGaAs/GaAs HBTs are reported. Layers with up to 10% indium content appeared to be free of misfit dislocations, and resulted in HBTs with good I/V characteristics which scaled with In content according to theory.

Original language	English
Pages (from-to)	419-421
Number of pages	3
Journal	Electronics Letters
Volume	22
Issue number	8
DOIs	https://doi.org/10.1049/el:19860286
State	Published - 1 Jan 1986

Keywords

Bipolar transistors
Molecular beam epitaxy
Semiconductor devices and materials

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10.1049/el:19860286

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title = "AIGaAs/lnGaAs/GaAs Strained-Layer Heterojunction Bipolar Transistors by Molecular Beam Epitaxy",

abstract = "The growth and characteristics of the first AlGaAs/InGaAs/GaAs HBTs are reported. Layers with up to 10% indium content appeared to be free of misfit dislocations, and resulted in HBTs with good I/V characteristics which scaled with In content according to theory.",

keywords = "Bipolar transistors, Molecular beam epitaxy, Semiconductor devices and materials",

author = "Sullivan, {G. J.} and Asbeck, {P. M.} and Mau-Chung Chang and Miller, {D. L.} and Wang, {K. C.}",

year = "1986",

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language = "English",

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AU - Sullivan, G. J.

AU - Asbeck, P. M.

AU - Chang, Mau-Chung

AU - Miller, D. L.

AU - Wang, K. C.

PY - 1986/1/1

Y1 - 1986/1/1

N2 - The growth and characteristics of the first AlGaAs/InGaAs/GaAs HBTs are reported. Layers with up to 10% indium content appeared to be free of misfit dislocations, and resulted in HBTs with good I/V characteristics which scaled with In content according to theory.

AB - The growth and characteristics of the first AlGaAs/InGaAs/GaAs HBTs are reported. Layers with up to 10% indium content appeared to be free of misfit dislocations, and resulted in HBTs with good I/V characteristics which scaled with In content according to theory.

KW - Bipolar transistors

KW - Molecular beam epitaxy

KW - Semiconductor devices and materials

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DO - 10.1049/el:19860286

M3 - Article

AN - SCOPUS:0022693484

SN - 0013-5194

VL - 22

SP - 419

EP - 421

JO - Electronics Letters

JF - Electronics Letters

IS - 8

ER -

AIGaAs/lnGaAs/GaAs Strained-Layer Heterojunction Bipolar Transistors by Molecular Beam Epitaxy

Abstract

Keywords

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