The growth and characteristics of the first AlGaAs/InGaAs/GaAs HBTs are reported. Layers with up to 10% indium content appeared to be free of misfit dislocations, and resulted in HBTs with good I/V characteristics which scaled with In content according to theory.
|Number of pages||3|
|State||Published - 1 Jan 1986|
- Bipolar transistors
- Molecular beam epitaxy
- Semiconductor devices and materials