Aigaas/Gaas Heterojunction Bipolar Transistor circuits with Improved High-Speed Performance

Mau-Chung Chang; P. M. Asbeck; K. C. Wang; G. J. Sullivan; D. L. Miller

doi:10.1049/el:19860803

Aigaas/Gaas Heterojunction Bipolar Transistor circuits with Improved High-Speed Performance

Mau-Chung Chang, P. M. Asbeck, K. C. Wang, G. J. Sullivan, D. L. Miller

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Using a self-aligned base contact process and proton implantation to reduce extrinsic base-collector capacitance, we have improved the high-speed performance of AlGaAs/ GaAs heterojunction bipolar transistor digital circuits. The cutoff frequency of the transistor fT with an emitter width of 2 0 μm is 45 GHz. NTL ring oscillators have operated at 16-5 ps/gate and CML ring oscillators at 27.6 ps/gate. Frequency dividers (1/4) have operated up to 11 GHz with wafer-probe testing. These are record speeds for bipolar circuits.

Original language	English
Pages (from-to)	1173-1174
Number of pages	2
Journal	Electronics Letters
Volume	22
Issue number	22
DOIs	https://doi.org/10.1049/el:19860803
State	Published - 1 Jan 1986

Keywords

Digital circuits
Semiconductor devices and materials

Access to Document

10.1049/el:19860803

Cite this

@article{065ef8a4aa924ae086d4d89c0ce89ff4,

title = "Aigaas/Gaas Heterojunction Bipolar Transistor circuits with Improved High-Speed Performance",

abstract = "Using a self-aligned base contact process and proton implantation to reduce extrinsic base-collector capacitance, we have improved the high-speed performance of AlGaAs/ GaAs heterojunction bipolar transistor digital circuits. The cutoff frequency of the transistor fT with an emitter width of 2 0 μm is 45 GHz. NTL ring oscillators have operated at 16-5 ps/gate and CML ring oscillators at 27.6 ps/gate. Frequency dividers (1/4) have operated up to 11 GHz with wafer-probe testing. These are record speeds for bipolar circuits.",

keywords = "Digital circuits, Semiconductor devices and materials",

author = "Mau-Chung Chang and Asbeck, {P. M.} and Wang, {K. C.} and Sullivan, {G. J.} and Miller, {D. L.}",

year = "1986",

month = jan,

day = "1",

doi = "10.1049/el:19860803",

language = "English",

volume = "22",

pages = "1173--1174",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "22",

}

TY - JOUR

T1 - Aigaas/Gaas Heterojunction Bipolar Transistor circuits with Improved High-Speed Performance

AU - Chang, Mau-Chung

AU - Asbeck, P. M.

AU - Wang, K. C.

AU - Sullivan, G. J.

AU - Miller, D. L.

PY - 1986/1/1

Y1 - 1986/1/1

N2 - Using a self-aligned base contact process and proton implantation to reduce extrinsic base-collector capacitance, we have improved the high-speed performance of AlGaAs/ GaAs heterojunction bipolar transistor digital circuits. The cutoff frequency of the transistor fT with an emitter width of 2 0 μm is 45 GHz. NTL ring oscillators have operated at 16-5 ps/gate and CML ring oscillators at 27.6 ps/gate. Frequency dividers (1/4) have operated up to 11 GHz with wafer-probe testing. These are record speeds for bipolar circuits.

AB - Using a self-aligned base contact process and proton implantation to reduce extrinsic base-collector capacitance, we have improved the high-speed performance of AlGaAs/ GaAs heterojunction bipolar transistor digital circuits. The cutoff frequency of the transistor fT with an emitter width of 2 0 μm is 45 GHz. NTL ring oscillators have operated at 16-5 ps/gate and CML ring oscillators at 27.6 ps/gate. Frequency dividers (1/4) have operated up to 11 GHz with wafer-probe testing. These are record speeds for bipolar circuits.

KW - Digital circuits

KW - Semiconductor devices and materials

UR - http://www.scopus.com/inward/record.url?scp=0022794060&partnerID=8YFLogxK

U2 - 10.1049/el:19860803

DO - 10.1049/el:19860803

M3 - Article

AN - SCOPUS:0022794060

SN - 0013-5194

VL - 22

SP - 1173

EP - 1174

JO - Electronics Letters

JF - Electronics Letters

IS - 22

ER -

Aigaas/Gaas Heterojunction Bipolar Transistor circuits with Improved High-Speed Performance

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this