Aggressively Scaled Atomic Layer Deposited Amorphous InZnOxThin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS= 2V)

Yan Kui Liang*, June Yang Zheng, Yu Lon Lin, Wei Li Li, Yu Cheng Lu, Dong Ru Hsieh, Li Chi Peng, Tsung Te Chou, Chi Chung Kei, Chun Chieh Lu, Huai Ying Huang, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang, Chun Hsiung Lin*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this work, we reported aggressively scaled amorphous InZnOx (α-IZO) thin film transistor (TFT) in channel length (Lch=8 nm) and thickness (2 nm) as a promising candidate for monolithic three-dimensional (M3D) integrations at back-end-of-line (BEOL). The bottom gate TFT with ultra-short Lch of 8 nm exhibited excellent sub-threshold swings (SS) value of 69 mV/dec, high filed-effect mobility (μFE) of 41 cm2/V-s and on-current density (ION) up to 575 μ A μ m (VDS = 1V, VG|= 2V) with outstanding maximum transconductance (Gm) value of 521 μ S μ m (VDS = 1 V). In particular, the maximum Gm reaches 802 μ S μ m at VDS= 2V and very low drain induce barrier lowering (DIBL) performance of 27.8 mV/V represent the best Gm and DIBL values reported for ternary amorphous oxide-semiconductor based TFTs. Furthermore, the highly stable device characteristics of the TFT was demonstrated with positive gate bias stress (PBS), the threshold voltage shift (Δ Vth) of 26.5

Original languageEnglish
Title of host publication2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863488069
DOIs
StatePublished - 2023
Event2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 - Kyoto, Japan
Duration: 11 Jun 202316 Jun 2023

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2023-June
ISSN (Print)0743-1562

Conference

Conference2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
Country/TerritoryJapan
CityKyoto
Period11/06/2316/06/23

Fingerprint

Dive into the research topics of 'Aggressively Scaled Atomic Layer Deposited Amorphous InZnOxThin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS= 2V)'. Together they form a unique fingerprint.

Cite this