Aggressive Equivalent Oxide Thickness of 0.7 nm on Si0.8Ge0.2Through HfO2 Dielectric Direct Deposition

Meng Chien Lee, Yi Yang Zhao, Wei Lun Chen, Shin Yuan Wang, Yi Xuan Chen, Guang Li Luo, Chao Hsin Chien*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This study demonstrated the ultralow equivalent oxide thickness (EOT) value of 0.72 nm and the high-quality high- κ /Si0.8Ge0.2 interface on p-type Si0.8Ge0.2 with direct deposition of HfO2. The ultrathin interfacial layer (IL) thickness of 0.4 nm was observed in the high-resolution transmission electron microscope (HRTEM) images. The high-quality interface might result from the high- κ /Si0.8Ge0.2 interface mainly consisting of the higher Si oxidation states, verified by X-ray photoelectron spectroscopy (XPS). Thus, this study refutes the necessity of IL formation and paves the way for low-EOT Si0.8Ge0.2 devices.

Original languageEnglish
Pages (from-to)1605-1608
Number of pages4
JournalIeee Electron Device Letters
Volume43
Issue number10
DOIs
StatePublished - 1 Oct 2022

Keywords

  • Equivalent oxide thickness
  • high-ΰ direct deposition
  • SiGe0MOSCAPs

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