We report a simple synthetic approach to grow uniform CH3NH3PbI3 perovskite (PSK) layers free of pinholes via varied portions of silver iodide (AgI) added to the precursor solution. XRD/EDS elemental mapping experiments demonstrated nearly uniform Ag distribution inside the perovskite film. When the 1% AgI-assisted perovskite films were fabricated into a p-i-n planar device, the photovoltaic performance was enhanced by ∼30% (PCE increased from 9.5% to 12.0%) relative to the standard cell without added AgI. Measurement of electronic properties using a hall setup indicated that perovskite films show p-type character after Ag doping, whereas the film is n-type without Ag. Transients of photoluminescence of perovskite films with and without AgI additive deposited on glass, p-type (PEDOT:PSS), and n-type (TiO2) contact layers were recorded with a time-correlated single-photon counting (TCSPC) technique. The TCSPC results indicate that addition of AgI inside perovskite in contact with PEDOT:PSS accelerated the hole-extraction motion whereas that in contact with TiO2 led to a decelerated electron extraction, in agreement with the trend observed from the photovoltaic results. The silver cationic dopant inside the perovskite films had hence an effect of controlling the morphology to improve photovoltaic performance for devices with p-i-n configuration. (Graph Presented).