AES and EELS study of ErSi2 and its behaviour under ion bombardment and oxygen exposure

S. Valeri; U. del Pennino; G. Ottaviani; P. Sassaroli; King-Ning Tu

doi:10.1016/0038-1098(86)90272-3

AES and EELS study of ErSi₂ and its behaviour under ion bombardment and oxygen exposure

S. Valeri^*, U. del Pennino, G. Ottaviani, P. Sassaroli, King-Ning Tu

^*Corresponding author for this work

International College of Semiconductor Technology

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Abstract

We report on Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) investigations on ErSi₂ : the silicide behaviour under Ar⁺ bombardment (1-5 KeV) and oxygen exposure at room temperature was studied. The ion beam processed surface shows a Si enrichment, resulting in an ErSi-like stoichiometry. This result suggests a predominant role of the mass difference between Er and Si in the sputtering mechanism of ErSi₂ At exposure up to 10³ langmuirs, both components of the silicide react with oxygen. Firstly, Er oxide is formed, in an Er₂O₃-like state. After the consumption of the available Er atoms in the surface layer, SiO₂ starts to grow. These results are interpreted in terms of a greater heat of formation for Er oxide than for Si oxide.

Original language	English
Pages (from-to)	569-573
Number of pages	5
Journal	Solid State Communications
Volume	60
Issue number	7
DOIs	https://doi.org/10.1016/0038-1098(86)90272-3
State	Published - 1 Jan 1986

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@article{7b5de7d335f649eea00ae92e60e1971a,

title = "AES and EELS study of ErSi2 and its behaviour under ion bombardment and oxygen exposure",

abstract = "We report on Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) investigations on ErSi2 : the silicide behaviour under Ar+ bombardment (1-5 KeV) and oxygen exposure at room temperature was studied. The ion beam processed surface shows a Si enrichment, resulting in an ErSi-like stoichiometry. This result suggests a predominant role of the mass difference between Er and Si in the sputtering mechanism of ErSi2 At exposure up to 103 langmuirs, both components of the silicide react with oxygen. Firstly, Er oxide is formed, in an Er2O3-like state. After the consumption of the available Er atoms in the surface layer, SiO2 starts to grow. These results are interpreted in terms of a greater heat of formation for Er oxide than for Si oxide.",

author = "S. Valeri and {del Pennino}, U. and G. Ottaviani and P. Sassaroli and King-Ning Tu",

year = "1986",

month = jan,

day = "1",

doi = "10.1016/0038-1098(86)90272-3",

language = "English",

volume = "60",

pages = "569--573",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "7",

}

TY - JOUR

T1 - AES and EELS study of ErSi2 and its behaviour under ion bombardment and oxygen exposure

AU - Valeri, S.

AU - del Pennino, U.

AU - Ottaviani, G.

AU - Sassaroli, P.

AU - Tu, King-Ning

PY - 1986/1/1

Y1 - 1986/1/1

N2 - We report on Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) investigations on ErSi2 : the silicide behaviour under Ar+ bombardment (1-5 KeV) and oxygen exposure at room temperature was studied. The ion beam processed surface shows a Si enrichment, resulting in an ErSi-like stoichiometry. This result suggests a predominant role of the mass difference between Er and Si in the sputtering mechanism of ErSi2 At exposure up to 103 langmuirs, both components of the silicide react with oxygen. Firstly, Er oxide is formed, in an Er2O3-like state. After the consumption of the available Er atoms in the surface layer, SiO2 starts to grow. These results are interpreted in terms of a greater heat of formation for Er oxide than for Si oxide.

AB - We report on Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) investigations on ErSi2 : the silicide behaviour under Ar+ bombardment (1-5 KeV) and oxygen exposure at room temperature was studied. The ion beam processed surface shows a Si enrichment, resulting in an ErSi-like stoichiometry. This result suggests a predominant role of the mass difference between Er and Si in the sputtering mechanism of ErSi2 At exposure up to 103 langmuirs, both components of the silicide react with oxygen. Firstly, Er oxide is formed, in an Er2O3-like state. After the consumption of the available Er atoms in the surface layer, SiO2 starts to grow. These results are interpreted in terms of a greater heat of formation for Er oxide than for Si oxide.

UR - http://www.scopus.com/inward/record.url?scp=46149134815&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(86)90272-3

DO - 10.1016/0038-1098(86)90272-3

M3 - Article

AN - SCOPUS:46149134815

SN - 0038-1098

VL - 60

SP - 569

EP - 573

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

AES and EELS study of ErSi₂ and its behaviour under ion bombardment and oxygen exposure

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