Advancements in single-crystal silicon with elevated-laser-liquid-phase-epitaxy (ELLPE) for monolithic 3D ICs

Bo Jheng Shih; Yu Ming Pan; Hao Tung Chung; Nein Chih Lin; Chih Chao Yang; Po Tsang Huang; Huang Chung Cheng; Chang Hong Shen; Jia Min Shieh; Wen Fa Wu; Kuan Neng Chen; Chenming Hu

doi:10.35848/1347-4065/ad2fdc

Advancements in single-crystal silicon with elevated-laser-liquid-phase-epitaxy (ELLPE) for monolithic 3D ICs

Bo Jheng Shih^*, Yu Ming Pan, Hao Tung Chung, Nein Chih Lin, Chih Chao Yang, Po Tsang Huang, Huang Chung Cheng, Chang Hong Shen, Jia Min Shieh, Wen Fa Wu, Kuan Neng Chen, Chenming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, we present a low thermal budget elevated-laser-liquid-phase-epitaxy technique designed for the precise fabrication of single-crystal islands (SCIs) intended for use in middle-end-of-line (MEOL) FinFETs. Each of these SCIs features a (100) orientation tended from Si seeding structure and is successfully integrated as channel materials in the MEOL circuit of a monolithic 3D IC (3DIC). This technique effectively mitigates the typical performance disparities associated with poly-Si channel materials in upper tiers, addressing a significant challenge in advanced electronic device fabrication and potentially enhancing the performance and reliability of MEOL FinFETs in monolithic 3DIC.

Original language	English
Article number	04SP30
Journal	Japanese journal of applied physics
Volume	63
Issue number	4
DOIs	https://doi.org/10.35848/1347-4065/ad2fdc
State	Published - 1 Apr 2024

Keywords

elevated-laser-liquid-phase-epitaxy technique
laser recrystallization
monolithic 3DIC

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10.35848/1347-4065/ad2fdc

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Shih, B. J., Pan, Y. M., Chung, H. T., Lin, N. C., Yang, C. C., Huang, P. T., Cheng, H. C., Shen, C. H., Shieh, J. M., Wu, W. F., Chen, K. N., & Hu, C. (2024). Advancements in single-crystal silicon with elevated-laser-liquid-phase-epitaxy (ELLPE) for monolithic 3D ICs. Japanese journal of applied physics, 63(4), Article 04SP30. https://doi.org/10.35848/1347-4065/ad2fdc

@article{4c47b82c9b604e949dfb9178439167cf,

title = "Advancements in single-crystal silicon with elevated-laser-liquid-phase-epitaxy (ELLPE) for monolithic 3D ICs",

abstract = "In this study, we present a low thermal budget elevated-laser-liquid-phase-epitaxy technique designed for the precise fabrication of single-crystal islands (SCIs) intended for use in middle-end-of-line (MEOL) FinFETs. Each of these SCIs features a (100) orientation tended from Si seeding structure and is successfully integrated as channel materials in the MEOL circuit of a monolithic 3D IC (3DIC). This technique effectively mitigates the typical performance disparities associated with poly-Si channel materials in upper tiers, addressing a significant challenge in advanced electronic device fabrication and potentially enhancing the performance and reliability of MEOL FinFETs in monolithic 3DIC.",

keywords = "elevated-laser-liquid-phase-epitaxy technique, laser recrystallization, monolithic 3DIC",

author = "Shih, {Bo Jheng} and Pan, {Yu Ming} and Chung, {Hao Tung} and Lin, {Nein Chih} and Yang, {Chih Chao} and Huang, {Po Tsang} and Cheng, {Huang Chung} and Shen, {Chang Hong} and Shieh, {Jia Min} and Wu, {Wen Fa} and Chen, {Kuan Neng} and Chenming Hu",

note = "Publisher Copyright: {\textcopyright} 2024 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.",

year = "2024",

month = apr,

day = "1",

doi = "10.35848/1347-4065/ad2fdc",

language = "English",

volume = "63",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4",

}

TY - JOUR

T1 - Advancements in single-crystal silicon with elevated-laser-liquid-phase-epitaxy (ELLPE) for monolithic 3D ICs

AU - Shih, Bo Jheng

AU - Pan, Yu Ming

AU - Chung, Hao Tung

AU - Lin, Nein Chih

AU - Yang, Chih Chao

AU - Huang, Po Tsang

AU - Cheng, Huang Chung

AU - Shen, Chang Hong

AU - Shieh, Jia Min

AU - Wu, Wen Fa

AU - Chen, Kuan Neng

AU - Hu, Chenming

PY - 2024/4/1

Y1 - 2024/4/1

N2 - In this study, we present a low thermal budget elevated-laser-liquid-phase-epitaxy technique designed for the precise fabrication of single-crystal islands (SCIs) intended for use in middle-end-of-line (MEOL) FinFETs. Each of these SCIs features a (100) orientation tended from Si seeding structure and is successfully integrated as channel materials in the MEOL circuit of a monolithic 3D IC (3DIC). This technique effectively mitigates the typical performance disparities associated with poly-Si channel materials in upper tiers, addressing a significant challenge in advanced electronic device fabrication and potentially enhancing the performance and reliability of MEOL FinFETs in monolithic 3DIC.

AB - In this study, we present a low thermal budget elevated-laser-liquid-phase-epitaxy technique designed for the precise fabrication of single-crystal islands (SCIs) intended for use in middle-end-of-line (MEOL) FinFETs. Each of these SCIs features a (100) orientation tended from Si seeding structure and is successfully integrated as channel materials in the MEOL circuit of a monolithic 3D IC (3DIC). This technique effectively mitigates the typical performance disparities associated with poly-Si channel materials in upper tiers, addressing a significant challenge in advanced electronic device fabrication and potentially enhancing the performance and reliability of MEOL FinFETs in monolithic 3DIC.

KW - elevated-laser-liquid-phase-epitaxy technique

KW - laser recrystallization

KW - monolithic 3DIC

UR - http://www.scopus.com/inward/record.url?scp=85189369254&partnerID=8YFLogxK

U2 - 10.35848/1347-4065/ad2fdc

DO - 10.35848/1347-4065/ad2fdc

M3 - Article

AN - SCOPUS:85189369254

SN - 0021-4922

VL - 63

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 4

M1 - 04SP30

ER -

Advancements in single-crystal silicon with elevated-laser-liquid-phase-epitaxy (ELLPE) for monolithic 3D ICs

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Keywords

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