TY - GEN
T1 - Advancements in High-Mobility SnO2-Based Thin-Film Transistors
T2 - 31st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2024
AU - Chin, Albert
AU - Pooja, Pheiroijam
N1 - Publisher Copyright:
© 2024 FTFMD.
PY - 2024
Y1 - 2024
N2 - The 7 nm nanosheet tin oxynitride (SnON) with 7.6 % nitrogen thin film transistor (TFT) exhibits a record high field-effect mobility (TFE) of 299 cm2N-s. The 5 nm thick nanosheet SnON TFT showed μFE of 277 cm2N-s compared to control SnO2 device μFE of 211 cm2N-s with the same 5 nm thickness. According to quantum-mechanical calculations, the reason for the high μFE of nanosheet SnON TFT is its lower effective mass of electrons in the conduction band, which is 0.29 mo, compared to 0.41 mo for SnO2. By injecting non-oxide anions and controlling the valence band by substitutional alloying with nitrogen anions, SnON can further lower defect trap densities, boost on-current (ION), and improve the transistor's mobility. This allows for the removal or passivation of oxygen vacancy levels. The SnON TFT device can be extensively deployed in advanced high-definition displays and monolithic 3D ICs.
AB - The 7 nm nanosheet tin oxynitride (SnON) with 7.6 % nitrogen thin film transistor (TFT) exhibits a record high field-effect mobility (TFE) of 299 cm2N-s. The 5 nm thick nanosheet SnON TFT showed μFE of 277 cm2N-s compared to control SnO2 device μFE of 211 cm2N-s with the same 5 nm thickness. According to quantum-mechanical calculations, the reason for the high μFE of nanosheet SnON TFT is its lower effective mass of electrons in the conduction band, which is 0.29 mo, compared to 0.41 mo for SnO2. By injecting non-oxide anions and controlling the valence band by substitutional alloying with nitrogen anions, SnON can further lower defect trap densities, boost on-current (ION), and improve the transistor's mobility. This allows for the removal or passivation of oxygen vacancy levels. The SnON TFT device can be extensively deployed in advanced high-definition displays and monolithic 3D ICs.
UR - http://www.scopus.com/inward/record.url?scp=85203175473&partnerID=8YFLogxK
U2 - 10.23919/AM-FPD61635.2024.10615518
DO - 10.23919/AM-FPD61635.2024.10615518
M3 - Conference contribution
AN - SCOPUS:85203175473
T3 - 2024 31st International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2024
SP - 72
EP - 75
BT - 2024 31st International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2024
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 2 July 2024 through 5 July 2024
ER -