Advanced gate-all-around fin-like poly-si tfts with multiple nanowire channels

Shih Wei Tu; Ta Chuan Liao; Wei Kai Lin; Cheng Chin Liu; Ya-Hsiang Tai; Huang-Chung Cheng; Feng Tso Chien; Chii Wen Chen; Wan Lu Chen

doi:10.1889/1.3069370

Advanced gate-all-around fin-like poly-si tfts with multiple nanowire channels

Shih Wei Tu^*, Ta Chuan Liao, Wei Kai Lin, Cheng Chin Liu, Ya-Hsiang Tai, Huang-Chung Cheng, Feng Tso Chien, Chii Wen Chen, Wan Lu Chen

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The gate-all-around (GAA) fin-like poly-Si TFTs (FinTFTs) with multiple nanowire channels (MNCs) have been fabricated using a simple process to demonstrate high performance electrical characteristics. The fin-like nanowire (NW) channel with high body thickness-to-width ratio (T _Fin /W _Fin ), approximately equals to one, was realized only with a sidewall-spacer formation. The unique suspending MNCs were also achieved to build the GAA structure. By the way, the GAA-MNC FinTFTs showed outstanding three-dimensional gate controllability and excellent electrical characteristics, which revealed a high ON/OFF current ratio (≥10 ⁸ ), a low threshold voltage, a steep subthreshold swing, a near-free drain-induced barrier lowering and a good reliability. Therefore, such the high-performance GAA-MNC FinTFTs are very suitable for the applications in the system-on-panel (SOP) and three-dimensional (3D) circuits.

Original language	English
Pages (from-to)	1270-1273
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	39
Issue number	3
DOIs	https://doi.org/10.1889/1.3069370
State	Published - 30 Oct 2008
Event	2008 SID International Symposium - Los Angeles, CA, United States Duration: 20 May 2008 → 21 May 2008

Access to Document

10.1889/1.3069370

Cite this

@article{27072c6cea424874b5ecbccad57ac27c,

title = "Advanced gate-all-around fin-like poly-si tfts with multiple nanowire channels",

abstract = " The gate-all-around (GAA) fin-like poly-Si TFTs (FinTFTs) with multiple nanowire channels (MNCs) have been fabricated using a simple process to demonstrate high performance electrical characteristics. The fin-like nanowire (NW) channel with high body thickness-to-width ratio (T Fin /W Fin ), approximately equals to one, was realized only with a sidewall-spacer formation. The unique suspending MNCs were also achieved to build the GAA structure. By the way, the GAA-MNC FinTFTs showed outstanding three-dimensional gate controllability and excellent electrical characteristics, which revealed a high ON/OFF current ratio (≥10 8 ), a low threshold voltage, a steep subthreshold swing, a near-free drain-induced barrier lowering and a good reliability. Therefore, such the high-performance GAA-MNC FinTFTs are very suitable for the applications in the system-on-panel (SOP) and three-dimensional (3D) circuits.",

author = "Tu, {Shih Wei} and Liao, {Ta Chuan} and Lin, {Wei Kai} and Liu, {Cheng Chin} and Ya-Hsiang Tai and Huang-Chung Cheng and Chien, {Feng Tso} and Chen, {Chii Wen} and Chen, {Wan Lu}",

year = "2008",

month = oct,

day = "30",

doi = "10.1889/1.3069370",

language = "English",

volume = "39",

pages = "1270--1273",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc.",

number = "3",

note = "2008 SID International Symposium ; Conference date: 20-05-2008 Through 21-05-2008",

}

TY - JOUR

T1 - Advanced gate-all-around fin-like poly-si tfts with multiple nanowire channels

AU - Tu, Shih Wei

AU - Liao, Ta Chuan

AU - Lin, Wei Kai

AU - Liu, Cheng Chin

AU - Tai, Ya-Hsiang

AU - Cheng, Huang-Chung

AU - Chien, Feng Tso

AU - Chen, Chii Wen

AU - Chen, Wan Lu

PY - 2008/10/30

Y1 - 2008/10/30

N2 - The gate-all-around (GAA) fin-like poly-Si TFTs (FinTFTs) with multiple nanowire channels (MNCs) have been fabricated using a simple process to demonstrate high performance electrical characteristics. The fin-like nanowire (NW) channel with high body thickness-to-width ratio (T Fin /W Fin ), approximately equals to one, was realized only with a sidewall-spacer formation. The unique suspending MNCs were also achieved to build the GAA structure. By the way, the GAA-MNC FinTFTs showed outstanding three-dimensional gate controllability and excellent electrical characteristics, which revealed a high ON/OFF current ratio (≥10 8 ), a low threshold voltage, a steep subthreshold swing, a near-free drain-induced barrier lowering and a good reliability. Therefore, such the high-performance GAA-MNC FinTFTs are very suitable for the applications in the system-on-panel (SOP) and three-dimensional (3D) circuits.

AB - The gate-all-around (GAA) fin-like poly-Si TFTs (FinTFTs) with multiple nanowire channels (MNCs) have been fabricated using a simple process to demonstrate high performance electrical characteristics. The fin-like nanowire (NW) channel with high body thickness-to-width ratio (T Fin /W Fin ), approximately equals to one, was realized only with a sidewall-spacer formation. The unique suspending MNCs were also achieved to build the GAA structure. By the way, the GAA-MNC FinTFTs showed outstanding three-dimensional gate controllability and excellent electrical characteristics, which revealed a high ON/OFF current ratio (≥10 8 ), a low threshold voltage, a steep subthreshold swing, a near-free drain-induced barrier lowering and a good reliability. Therefore, such the high-performance GAA-MNC FinTFTs are very suitable for the applications in the system-on-panel (SOP) and three-dimensional (3D) circuits.

UR - http://www.scopus.com/inward/record.url?scp=54549111945&partnerID=8YFLogxK

U2 - 10.1889/1.3069370

DO - 10.1889/1.3069370

M3 - Conference article

AN - SCOPUS:54549111945

SN - 0097-966X

VL - 39

SP - 1270

EP - 1273

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 3

T2 - 2008 SID International Symposium

Y2 - 20 May 2008 through 21 May 2008

ER -

Advanced gate-all-around fin-like poly-si tfts with multiple nanowire channels

Abstract

Access to Document

Other files and links

Fingerprint

Cite this