Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application

Fun Tat Chin, Yu Hsien Lin*, Hsin Chiang You, Wen Luh Yang, Li Min Lin, Yu Ping Hsiao, Chum Min Ko, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the chemical displacement time for fabricating Cu/SiO2-stacked resistive random-access memory (ReRAM). Compared with other Cu deposition methods, this CDT easily controls the interface of the Cu-insulator, the switching layer thickness, and the immunity of the Cu etching process, assisting the 1-transistor-1-ReRAM (1T-1R) structure and system-on-chip integration. The modulated shape of the Cu-SiO2 interface and the thickness of the SiO2 layer obtained by CDT-based Cu deposition on SiO2 were confirmed by scanning electron microscopy and atomic force microscopy. The CDT-fabricated Cu/SiO2-stacked ReRAM exhibited lower operation voltages and more stable data retention characteristics than the control Cu/SiO2-stacked sample. As the Cu CDT processing time increased, the forming and set voltages of the CDT-fabricated Cu/SiO2-stacked ReRAM decreased. Conversely, decreasing the processing time reduced the on-state current and reset voltage while increasing the endurance switching cycle time. Therefore, the switching characteristics were easily modulated by Cu CDT, yielding a high performance electrochemical metallization (ECM)-type ReRAM.

Original languageEnglish
JournalNanoscale Research Letters
Issue number1
StatePublished - 1 Jan 2014


  • Cu CDT
  • ECM
  • ReRAM
  • SiO


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