Advanced CMOS technology portfolio for RF IC applications

Chih Sheng Chang*, Chih Ping Chao, John G.J. Chern, Jack Yuan Chen Sun

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


A high quality 90-nm CMOS-based technology portfolio suitable for various RF IC applications is presented. The portfolio is built up by a wide selection of active and passive components and a user-friendly process design kit (PDK). Layout-optimized RF components are studied in details including state-of-the-art 90 nm RFMOS devices with 120-160 GHz fT and very low noise figures, varactors with tradeoff between quality factor and tuning ratio, precision capacitors with metal-insulator-metal and metal-over-metal schemes, and a variety of inductor structures suitable for different RF designs. The effectiveness for isolating substrate RF noise is also compared among several layout schemes. Finally the guidelines and requirements for constructing a useful PDK are addressed.

Original languageEnglish
Pages (from-to)1324-1334
Number of pages11
JournalIEEE Transactions on Electron Devices
Issue number7
StatePublished - Jul 2005


  • Foundry
  • RF IC


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